IMZA65R107M1HXKSA1

Infineon Technologies
726-IMZA65R107M1HXKS
IMZA65R107M1HXKSA1

Fabricante:

Descripción:
MOSFETs de SiC SILICON CARBIDE MOSFET

Ciclo de vida:
Fin de vida útil:
Se encuentra obsoleto y será discontinuado por el fabricante.
Hoja de datos:
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En existencias: 437

Existencias:
437 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
52 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$8.28 $8.28
$5.54 $55.40
$4.45 $445.00
$3.96 $1,900.80
$3.51 $4,212.00

Producto similar

Infineon Technologies IMZA65R075M2HXKSA1
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MOSFETs de SiC SILICON CARBIDE MOSFET
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Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: MOSFETs de SiC
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
20 A
142 mOhms
- 5 V, + 23 V
5.7 V
15 nC
- 55 C
+ 150 C
75 W
Enhancement
CoolSiC
Marca: Infineon Technologies
Configuración: Single
Tiempo de caída: 6.4 ns
Empaquetado: Tube
Tipo de producto: SiC MOSFETS
Tiempo de subida: 7.4 ns
Serie: IMZA65R107
Cantidad de empaque de fábrica: 240
Subcategoría: Transistors
Tecnología: SiC
Tiempo de retardo de apagado típico: 12.2 ns
Tiempo típico de demora de encendido: 6.6 ns
Alias de las piezas n.º: IMZA65R107M1H SP005398435
Peso de la unidad: 6 g
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Atributos seleccionados: 0

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Códigos de cumplimiento
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Clasificaciones de origen
País de origen:
Austria
País de origen del ensamblaje:
China
País de difusión:
Austria
El país está sujeto a cambios en el momento del envío.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency. 

Residential Energy Storage Systems (ESS)

Infineon Residential Storage Solutions (ESS) offers various products to create and manage resilient energy infrastructures. Infineon's distinctive expertise in energy generation, power conversion, transmission, and battery management makes it an ideal natural partner to advance Energy Storage Solutions, especially in terms of efficiency, innovation, performance, and optimal cost.

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