RGW 650V Field Stop Trench IGBTs

ROHM Semiconductor RGW 650V Field Stop Trench IGBTs offer a low collector-emitter saturation voltage in a small package. The RGW IGBTs feature high-speed switching, low switching loss, and built-in very fast and soft recovery FRD. The ROHM RGW 650V Field Stop Trench IGBTs are ideal for solar inverter, UPS, welding, IH, and PFC applications.

Resultados: 51
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Paquete / Cubierta Estilo de montaje Configuración Máx. voltaje VCEO colector-emisor Voltaje de saturación colector-emisor Máximo voltaje puerta-emisor Colector de Corriente Continua a 25 C Dp - Disipación de potencia Temperatura de trabajo mínima Temperatura de trabajo máxima Empaquetado
ROHM Semiconductor IGBTs TO3P 650V 16A TRNCH 895En existencias
Min.: 1
Mult.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 27 A 61 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 30A TRNCH 2,394En existencias
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 51 A 156 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 40A TRNCH 2,388En existencias
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 71 A 202 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 60A TRNCH 2,387En existencias
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 104 A 288 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 40A, Automotive Hybrid IGBT with Built-In SiC-SBD 443En existencias
Min.: 1
Mult.: 1

SiC TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 81 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 50A TO-3PFM Field Stp Trnch IGBT 450En existencias
Min.: 1
Mult.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 45 A 89 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450En existencias
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 96 A 254 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450En existencias
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 96 A 254 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 50A, TO-247N, Field Stop Trench IGBT 450En existencias
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 96 A 254 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 18A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT 448En existencias
Min.: 1
Mult.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 30 A 67 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450En existencias
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450En existencias
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 30A, TO-247N, Field Stop Trench IGBT 450En existencias
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450En existencias
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 80 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs Transistor, IGBT, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450En existencias
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 80 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 40A, TO-247N, Field Stop Trench IGBT 450En existencias
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 80 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 50A TRNCH 2,400En existencias
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 88 A 245 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 50A TRNCH 2,400En existencias
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 88 A 245 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 30A TRNCH 2,394En existencias
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 51 A 156 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 40A TRNCH 2,400En existencias
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 71 A 202 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 60A TRNCH 2,400En existencias
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 104 A 288 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT 400En existencias
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT 450En existencias
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs Transistor IGBT, 650V 75A, TO-247N 450En existencias
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 30A, Automotive Hybrid IGBT with Built-In SiC-SBD 3En existencias
Min.: 1
Mult.: 1

SiC TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube