|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long lea
- STWA75N60DM6
- STMicroelectronics
-
1:
$10.26
-
185En existencias
|
N.º de artículo de Mouser
511-STWA75N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long lea
|
|
185En existencias
|
|
|
$10.26
|
|
|
$8.03
|
|
|
$6.69
|
|
|
$6.68
|
|
|
$5.57
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620 V 8.4 A TO-220 TO-22
- STF10N62K3
- STMicroelectronics
-
1:
$2.71
-
976En existencias
|
N.º de artículo de Mouser
511-STF10N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620 V 8.4 A TO-220 TO-22
|
|
976En existencias
|
|
|
$2.71
|
|
|
$1.74
|
|
|
$1.18
|
|
|
$0.983
|
|
|
$0.851
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep
- STFH13N60M2
- STMicroelectronics
-
1:
$3.15
-
970En existencias
-
Verificar estado con la fábrica
|
N.º de artículo de Mouser
511-STFH13N60M2
Verificar estado con la fábrica
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep
|
|
970En existencias
|
|
|
$3.15
|
|
|
$1.60
|
|
|
$1.36
|
|
|
$1.30
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Módulos IGBT SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
- STGIPQ5C60T-HLS
- STMicroelectronics
-
1:
$8.81
-
258En existencias
|
N.º de artículo de Mouser
511-STGIPQ5C60T-HLS
|
STMicroelectronics
|
Módulos IGBT SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
|
|
258En existencias
|
|
|
$8.81
|
|
|
$6.41
|
|
|
$4.62
|
|
|
$4.45
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
- STO36N60M6
- STMicroelectronics
-
1:
$6.03
-
504En existencias
|
N.º de artículo de Mouser
511-STO36N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
|
|
504En existencias
|
|
|
$6.03
|
|
|
$4.05
|
|
|
$2.92
|
|
|
$2.70
|
|
|
$2.70
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-LL-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-247 package
- STW35N60DM2
- STMicroelectronics
-
1:
$5.07
-
382En existencias
|
N.º de artículo de Mouser
511-STW35N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-247 package
|
|
382En existencias
|
|
|
$5.07
|
|
|
$3.40
|
|
|
$2.78
|
|
|
$2.37
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PTD HIGH VOLTAGE
- STB6N65K3
- STMicroelectronics
-
1:
$2.04
-
1,992En existencias
-
Verificar estado con la fábrica
|
N.º de artículo de Mouser
511-STB6N65K3
Verificar estado con la fábrica
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PTD HIGH VOLTAGE
|
|
1,992En existencias
|
|
|
$2.04
|
|
|
$1.31
|
|
|
$0.902
|
|
|
$0.764
|
|
|
Ver
|
|
|
$0.638
|
|
|
$0.608
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 300 mOhm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra na
- STFU15N80K5
- STMicroelectronics
-
1:
$3.78
-
704En existencias
|
N.º de artículo de Mouser
511-STFU15N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 300 mOhm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra na
|
|
704En existencias
|
|
|
$3.78
|
|
|
$2.48
|
|
|
$2.22
|
|
|
$1.98
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 Volt 6.4Amp Zener SuperMESH
- STP9NK65Z
- STMicroelectronics
-
1:
$3.90
-
914En existencias
|
N.º de artículo de Mouser
511-STP9NK65Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 Volt 6.4Amp Zener SuperMESH
|
|
914En existencias
|
|
|
$3.90
|
|
|
$2.55
|
|
|
$1.88
|
|
|
$1.67
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
$92.58
-
145En existencias
|
N.º de artículo de Mouser
511-2N2222AUB1
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
145En existencias
|
|
|
$92.58
|
|
|
$86.95
|
|
|
$75.37
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
$111.64
-
21En existencias
|
N.º de artículo de Mouser
511-2N2907AUB1
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21En existencias
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
$6.58
-
566En existencias
|
N.º de artículo de Mouser
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
566En existencias
|
|
|
$6.58
|
|
|
$4.56
|
|
|
$3.30
|
|
|
$3.28
|
|
|
$3.14
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
$20.55
-
154En existencias
-
1,000Se espera el 1/03/2027
|
N.º de artículo de Mouser
511-SCT012H90G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
154En existencias
1,000Se espera el 1/03/2027
|
|
|
$20.55
|
|
|
$14.76
|
|
|
$14.34
|
|
|
$13.39
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
$15.48
-
191En existencias
|
N.º de artículo de Mouser
511-SCT018H65G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
191En existencias
|
|
|
$15.48
|
|
|
$10.93
|
|
|
$10.52
|
|
|
$9.96
|
|
|
$9.30
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
$15.62
-
532En existencias
|
N.º de artículo de Mouser
511-SCT018W65G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532En existencias
|
|
|
$15.62
|
|
|
$12.30
|
|
|
$10.12
|
|
|
$9.87
|
|
|
$9.40
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
$12.91
-
338En existencias
|
N.º de artículo de Mouser
511-SCT027W65G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338En existencias
|
|
|
$12.91
|
|
|
$9.65
|
|
|
$8.34
|
|
|
$7.38
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
$13.15
-
693En existencias
|
N.º de artículo de Mouser
511-SCT040W120G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
693En existencias
|
|
|
$13.15
|
|
|
$9.19
|
|
|
$7.52
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
$13.05
-
599En existencias
|
N.º de artículo de Mouser
511-SCT040W120G3AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
599En existencias
|
|
|
$13.05
|
|
|
$9.12
|
|
|
$7.45
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
$12.57
-
368En existencias
-
1,200Se espera el 19/10/2026
|
N.º de artículo de Mouser
511-SCT070W120G3-4AG
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
368En existencias
1,200Se espera el 19/10/2026
|
|
|
$12.57
|
|
|
$9.35
|
|
|
$7.99
|
|
|
$7.15
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
$22.99
-
194En existencias
|
N.º de artículo de Mouser
511-SH63N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
194En existencias
|
|
|
$22.99
|
|
|
$17.97
|
|
|
$12.60
|
|
|
$12.60
|
|
|
$12.00
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
- SH68N65DM6AG
- STMicroelectronics
-
1:
$19.06
-
191En existencias
|
N.º de artículo de Mouser
511-SH68N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
|
|
191En existencias
|
|
|
$19.06
|
|
|
$13.62
|
|
|
$12.15
|
|
|
$12.15
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
|
|
N-Channel
|
|
|
|
Módulos IGBT SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
- STGIK10M120T
- STMicroelectronics
-
1:
$42.89
-
69En existencias
|
N.º de artículo de Mouser
511-STGIK10M120T
|
STMicroelectronics
|
Módulos IGBT SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
|
|
69En existencias
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
SDIPHP-30
|
|
|
|
|
IGBTs Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
- STGSH80HB65DAG
- STMicroelectronics
-
1:
$19.41
-
189En existencias
|
N.º de artículo de Mouser
511-STGSH80HB65DAG
|
STMicroelectronics
|
IGBTs Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
|
|
189En existencias
|
|
|
$19.41
|
|
|
$13.88
|
|
|
$12.43
|
|
|
$12.43
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
ACEPACK-5
|
|
|
|
|
IGBTs Trench gate field-stop 1200 V 50 A high-speed H series IGBT
- STGYA50H120DF2
- STMicroelectronics
-
1:
$6.35
-
550En existencias
|
N.º de artículo de Mouser
511-STGYA50H120DF2
|
STMicroelectronics
|
IGBTs Trench gate field-stop 1200 V 50 A high-speed H series IGBT
|
|
550En existencias
|
|
|
$6.35
|
|
|
$4.45
|
|
|
$3.89
|
|
|
$3.82
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
- STH12N120K5-2AG
- STMicroelectronics
-
1:
$12.01
-
686En existencias
-
1,000Se espera el 6/04/2026
|
N.º de artículo de Mouser
511-STH12N120K5-2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
|
|
686En existencias
1,000Se espera el 6/04/2026
|
|
|
$12.01
|
|
|
$9.73
|
|
|
$8.11
|
|
|
$7.37
|
|
|
$6.75
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
|