|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-ch 600 V 0.168 Ohm 17 A MDmesh
- STF24NM60N
- STMicroelectronics
-
1:
$4.28
-
2,091En existencias
|
N.º de artículo de Mouser
511-STF24NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-ch 600 V 0.168 Ohm 17 A MDmesh
|
|
2,091En existencias
|
|
|
$4.28
|
|
|
$2.06
|
|
|
$1.92
|
|
|
$1.67
|
|
|
Ver
|
|
|
$1.57
|
|
|
$1.51
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP ultra
- STFU23N80K5
- STMicroelectronics
-
1:
$4.92
-
1,960En existencias
|
N.º de artículo de Mouser
511-STFU23N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP ultra
|
|
1,960En existencias
|
|
|
$4.92
|
|
|
$3.25
|
|
|
$2.87
|
|
|
$2.83
|
|
|
Ver
|
|
|
$2.29
|
|
|
$2.19
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBTs N-Ch 600 Volt 10 Amp
- STGP10NB60S
- STMicroelectronics
-
1:
$2.93
-
6,418En existencias
|
N.º de artículo de Mouser
511-STGP10NB60S
|
STMicroelectronics
|
IGBTs N-Ch 600 Volt 10 Amp
|
|
6,418En existencias
|
|
|
$2.93
|
|
|
$1.07
|
|
|
$1.06
|
|
|
$0.99
|
|
|
Ver
|
|
|
$0.933
|
|
|
$0.92
|
|
|
$0.886
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
|
IGBTs PowerMESH" IGBT
- STGP10NC60KD
- STMicroelectronics
-
1:
$1.95
-
3,404En existencias
|
N.º de artículo de Mouser
511-STGP10NC60KD
|
STMicroelectronics
|
IGBTs PowerMESH" IGBT
|
|
3,404En existencias
|
|
|
$1.95
|
|
|
$0.803
|
|
|
$0.729
|
|
|
$0.653
|
|
|
Ver
|
|
|
$0.541
|
|
|
$0.538
|
|
|
$0.514
|
|
|
$0.509
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
|
IGBTs N-Ch 600 Volt 30 Amp
- STGW20NC60V
- STMicroelectronics
-
1:
$3.11
-
957En existencias
|
N.º de artículo de Mouser
511-STGW20NC60V
|
STMicroelectronics
|
IGBTs N-Ch 600 Volt 30 Amp
|
|
957En existencias
|
|
|
$3.11
|
|
|
$2.08
|
|
|
$1.80
|
|
|
$1.77
|
|
|
$1.71
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 3.3 mOhm typ., 108 A STripFET F7 Power MOSFET i
- STL110N4F7AG
- STMicroelectronics
-
1:
$1.91
-
5,207En existencias
|
N.º de artículo de Mouser
511-STL110N4F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 3.3 mOhm typ., 108 A STripFET F7 Power MOSFET i
|
|
5,207En existencias
|
|
|
$1.91
|
|
|
$1.22
|
|
|
$0.808
|
|
|
$0.662
|
|
|
$0.478
|
|
|
Ver
|
|
|
$0.58
|
|
|
$0.462
|
|
|
$0.46
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 H
- STL12N60M2
- STMicroelectronics
-
1:
$2.28
-
3,598En existencias
|
N.º de artículo de Mouser
511-STL12N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 H
|
|
3,598En existencias
|
|
|
$2.28
|
|
|
$1.47
|
|
|
$0.999
|
|
|
$0.803
|
|
|
$0.662
|
|
|
Ver
|
|
|
$0.749
|
|
|
$0.643
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel 40 V, 5 mOhm typ., 40 A STripFET F7 Power MOSFET
- STL76DN4LF7AG
- STMicroelectronics
-
1:
$1.75
-
16,014En existencias
|
N.º de artículo de Mouser
511-STL76DN4LF7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel 40 V, 5 mOhm typ., 40 A STripFET F7 Power MOSFET
|
|
16,014En existencias
|
|
|
$1.75
|
|
|
$1.42
|
|
|
$0.975
|
|
|
$0.803
|
|
|
$0.655
|
|
|
Ver
|
|
|
$0.74
|
|
|
$0.637
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V .95Ohm typ 3.6A Zener-protected
- STL7N80K5
- STMicroelectronics
-
1:
$2.08
-
5,655En existencias
|
N.º de artículo de Mouser
511-STL7N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V .95Ohm typ 3.6A Zener-protected
|
|
5,655En existencias
|
|
|
$2.08
|
|
|
$1.51
|
|
|
$1.14
|
|
|
$0.981
|
|
|
Ver
|
|
|
$0.858
|
|
|
$0.97
|
|
|
$0.858
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A
- STP10NK70ZFP
- STMicroelectronics
-
1:
$5.13
-
1,586En existencias
|
N.º de artículo de Mouser
511-STP10NK70ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A
|
|
1,586En existencias
|
|
|
$5.13
|
|
|
$2.68
|
|
|
$2.44
|
|
|
$2.03
|
|
|
Ver
|
|
|
$1.97
|
|
|
$1.89
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 12 Amp
- STP12NM50FP
- STMicroelectronics
-
1:
$4.04
-
1,325En existencias
|
N.º de artículo de Mouser
511-STP12NM50FP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 12 Amp
|
|
1,325En existencias
|
|
|
$4.04
|
|
|
$2.53
|
|
|
$2.39
|
|
|
$2.11
|
|
|
Ver
|
|
|
$2.10
|
|
|
$2.06
|
|
|
$2.02
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 250V STripFET II Mosfet
- STP17NF25
- STMicroelectronics
-
1:
$1.88
-
3,069En existencias
|
N.º de artículo de Mouser
511-STP17NF25
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 250V STripFET II Mosfet
|
|
3,069En existencias
|
|
|
$1.88
|
|
|
$0.752
|
|
|
$0.694
|
|
|
$0.622
|
|
|
Ver
|
|
|
$0.566
|
|
|
$0.532
|
|
|
$0.49
|
|
|
$0.482
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.168 Ohm 18A Mdmesh V
- STP20N65M5
- STMicroelectronics
-
1:
$3.89
-
969En existencias
|
N.º de artículo de Mouser
511-STP20N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.168 Ohm 18A Mdmesh V
|
|
969En existencias
|
|
|
$3.89
|
|
|
$2.04
|
|
|
$1.85
|
|
|
$1.51
|
|
|
Ver
|
|
|
$1.40
|
|
|
$1.34
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 24 Amp
- STP24NF10
- STMicroelectronics
-
1:
$2.11
-
5,963En existencias
|
N.º de artículo de Mouser
511-STP24NF10
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 24 Amp
|
|
5,963En existencias
|
|
|
$2.11
|
|
|
$0.689
|
|
|
$0.634
|
|
|
$0.587
|
|
|
Ver
|
|
|
$0.586
|
|
|
$0.564
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 2.5A Zener SuperMESH
- STP3NK80Z
- STMicroelectronics
-
1:
$2.53
-
1,947En existencias
|
N.º de artículo de Mouser
511-STP3NK80Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 2.5A Zener SuperMESH
|
|
1,947En existencias
|
|
|
$2.53
|
|
|
$1.24
|
|
|
$1.12
|
|
|
$0.892
|
|
|
Ver
|
|
|
$0.736
|
|
|
$0.723
|
|
|
$0.709
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 4 Amp
- STS4DNF60L
- STMicroelectronics
-
1:
$2.39
-
3,770En existencias
|
N.º de artículo de Mouser
511-STS4DNF60L
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 4 Amp
|
|
3,770En existencias
|
|
|
$2.39
|
|
|
$1.14
|
|
|
$0.892
|
|
|
$0.818
|
|
|
$0.802
|
|
|
Ver
|
|
|
$0.787
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET i
- STW58N60DM2AG
- STMicroelectronics
-
1:
$10.48
-
397En existencias
|
N.º de artículo de Mouser
511-STW58N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET i
|
|
397En existencias
|
|
|
$10.48
|
|
|
$6.79
|
|
|
$5.45
|
|
|
$4.97
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
IGBTs Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT
- STGYA50M120DF3
- STMicroelectronics
-
1:
$5.79
-
1,142En existencias
|
N.º de artículo de Mouser
511-STGYA50M120DF3
|
STMicroelectronics
|
IGBTs Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT
|
|
1,142En existencias
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
Max247-3
|
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) NPN Hi-Volt Fast Sw
- MJD47T4
- STMicroelectronics
-
1:
$1.46
-
11,413En existencias
|
N.º de artículo del Fabricante
MJD47T4
N.º de artículo de Mouser
511-MJD47
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) NPN Hi-Volt Fast Sw
|
|
11,413En existencias
|
|
|
$1.46
|
|
|
$0.921
|
|
|
$0.612
|
|
|
$0.48
|
|
|
$0.352
|
|
|
Ver
|
|
|
$0.437
|
|
|
$0.347
|
|
|
$0.339
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
TO-252-3
|
NPN
|
|
|
|
MOSFETs de SiC Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTW70N120G2V
- STMicroelectronics
-
1:
$27.67
-
714En existencias
|
N.º de artículo de Mouser
511-SCTW70N120G2V
|
STMicroelectronics
|
MOSFETs de SiC Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
|
|
714En existencias
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 75V 3.5mOhm N-Channel
- STB160N75F3
- STMicroelectronics
-
1:
$5.11
-
1,698En existencias
|
N.º de artículo de Mouser
511-STB160N75F3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 75V 3.5mOhm N-Channel
|
|
1,698En existencias
|
|
|
$5.11
|
|
|
$3.39
|
|
|
$2.68
|
|
|
$2.40
|
|
|
$2.20
|
|
|
Ver
|
|
|
$1.85
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in D2PAK package
- STB28N60M2
- STMicroelectronics
-
1:
$2.59
-
1,893En existencias
|
N.º de artículo de Mouser
511-STB28N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in D2PAK package
|
|
1,893En existencias
|
|
|
$2.59
|
|
|
$1.67
|
|
|
$1.16
|
|
|
$0.929
|
|
|
$0.856
|
|
|
Ver
|
|
|
$0.764
|
|
|
$0.76
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in
- STB30N65DM6AG
- STMicroelectronics
-
1:
$6.88
-
816En existencias
|
N.º de artículo de Mouser
511-STB30N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in
|
|
816En existencias
|
|
|
$6.88
|
|
|
$4.83
|
|
|
$3.61
|
|
|
$2.80
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in
- STB47N60DM6AG
- STMicroelectronics
-
1:
$7.47
-
1,000En existencias
|
N.º de artículo de Mouser
511-STB47N60DM6AG
|
STMicroelectronics
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in
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1,000En existencias
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$7.47
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$5.09
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$3.86
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$3.26
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$3.10
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Min.: 1
Mult.: 1
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MOSFETs
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Si
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SMD/SMT
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D2PAK-3 (TO-263-3)
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N-Channel
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch 60V 0.15Ohm 10A STripFET VI DeepGat
- STD10P6F6
- STMicroelectronics
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1:
$1.39
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12,297En existencias
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N.º de artículo de Mouser
511-STD10P6F6
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STMicroelectronics
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch 60V 0.15Ohm 10A STripFET VI DeepGat
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12,297En existencias
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$1.39
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$0.862
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$0.58
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$0.453
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$0.36
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Ver
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$0.413
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$0.336
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$0.308
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Min.: 1
Mult.: 1
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MOSFETs
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Si
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SMD/SMT
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DPAK-3 (TO-252-3)
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P-Channel
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