|
|
IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
- STGWT30H60DFB
- STMicroelectronics
-
1:
$2.95
-
712En existencias
|
N.º de artículo de Mouser
511-STGWT30H60DFB
|
STMicroelectronics
|
IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
|
|
712En existencias
|
|
|
$2.95
|
|
|
$1.59
|
|
|
$1.44
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-3P
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLN MOS 900V 1300m (VGS=10V) TO-3PN
- TK9J90E,S1E
- Toshiba
-
1:
$3.98
-
2,986En existencias
|
N.º de artículo de Mouser
757-TK9J90ES1E
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PLN MOS 900V 1300m (VGS=10V) TO-3PN
|
|
2,986En existencias
|
|
|
$3.98
|
|
|
$2.26
|
|
|
$1.84
|
|
|
$1.60
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-3P
|
N-Channel
|
|
|
|
IGBTs Trench gate field-stop 650 V, 20 A high speed HB series IGBT
- STGWT20H65FB
- STMicroelectronics
-
1:
$3.39
-
464En existencias
|
N.º de artículo de Mouser
511-STGWT20H65FB
|
STMicroelectronics
|
IGBTs Trench gate field-stop 650 V, 20 A high speed HB series IGBT
|
|
464En existencias
|
|
|
$3.39
|
|
|
$1.88
|
|
|
$1.28
|
|
|
$1.17
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-3P
|
|
|
|
|
IGBTs 1250V 20A trench gte field-stop IGBT
- STGWT20IH125DF
- STMicroelectronics
-
1:
$3.57
-
613En existencias
|
N.º de artículo de Mouser
511-STGWT20IH125DF
|
STMicroelectronics
|
IGBTs 1250V 20A trench gte field-stop IGBT
|
|
613En existencias
|
|
|
$3.57
|
|
|
$2.34
|
|
|
$1.64
|
|
|
$1.53
|
|
|
$1.33
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-3P
|
|
|
|
|
IGBTs 650V 60A HSpd trench gate field-stop IGBT
- STGWT60H65DFB
- STMicroelectronics
-
1:
$4.77
-
287En existencias
|
N.º de artículo de Mouser
511-STGWT60H65DFB
|
STMicroelectronics
|
IGBTs 650V 60A HSpd trench gate field-stop IGBT
|
|
287En existencias
|
|
|
$4.77
|
|
|
$2.56
|
|
|
$2.19
|
|
|
$1.96
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-3P
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO3P 250V 120A N-CH X3CLASS
- IXFQ120N25X3
- IXYS
-
1:
$14.05
-
10En existencias
|
N.º de artículo de Mouser
747-IXFQ120N25X3
|
IXYS
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO3P 250V 120A N-CH X3CLASS
|
|
10En existencias
|
|
|
$14.05
|
|
|
$9.64
|
|
|
$8.08
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-3P
|
N-Channel
|
|
|
|
IGBTs 650V 60A HSpd trench gate field-stop IGB
- STGWT60H65FB
- STMicroelectronics
-
1:
$4.32
-
199En existencias
|
N.º de artículo de Mouser
511-STGWT60H65FB
|
STMicroelectronics
|
IGBTs 650V 60A HSpd trench gate field-stop IGB
|
|
199En existencias
|
|
|
$4.32
|
|
|
$2.75
|
|
|
$2.23
|
|
|
$1.91
|
|
|
$1.80
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-3P
|
|
|
|
|
IGBTs Trench gate H series 650V 80A HiSpd
- STGWT80H65DFB
- STMicroelectronics
-
1:
$6.95
-
300Se espera el 25/05/2026
|
N.º de artículo de Mouser
511-STGWT80H65DFB
|
STMicroelectronics
|
IGBTs Trench gate H series 650V 80A HiSpd
|
|
300Se espera el 25/05/2026
|
|
|
$6.95
|
|
|
$4.00
|
|
|
$3.29
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-3P
|
|
|
|
|
IGBTs 650V 40A HSpd trench gate field-stop IGB
- STGWT40H65DFB
- STMicroelectronics
-
1:
$4.48
-
Plazo de entrega no en existencias 14 Semanas
|
N.º de artículo de Mouser
511-STGWT40H65DFB
|
STMicroelectronics
|
IGBTs 650V 40A HSpd trench gate field-stop IGB
|
|
Plazo de entrega no en existencias 14 Semanas
|
|
|
$4.48
|
|
|
$2.49
|
|
|
$1.80
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-3P
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO3P 200V 130A N-CH TRENCH
- IXTQ130N20T
- IXYS
-
300:
$5.16
-
Plazo de entrega no en existencias 23 Semanas
|
N.º de artículo de Mouser
747-IXTQ130N20T
|
IXYS
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO3P 200V 130A N-CH TRENCH
|
|
Plazo de entrega no en existencias 23 Semanas
|
|
Min.: 300
Mult.: 30
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-3P
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO3P 100V 60A N-CH TRENCH
- IXTQ60N10T
- IXYS
-
1:
$5.16
-
Plazo de entrega no en existencias 23 Semanas
|
N.º de artículo de Mouser
747-IXTQ60N10T
|
IXYS
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO3P 100V 60A N-CH TRENCH
|
|
Plazo de entrega no en existencias 23 Semanas
|
|
|
$5.16
|
|
|
$3.43
|
|
|
$2.14
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-3P
|
N-Channel
|
|
