Skip to Main Content

+52 33 3612 7301

Part of the TTI Family of Specialists Contact Mouser (USA) +52 33 3612 7301 Feedback

Change Location

$ USD

In Stock

RoHS

Log In
New customer? Start here
Log In
New customer? Start here

Order History

Mfr.	Mfr. #:	Qty	Ext Total

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

GTRB266502FC-V1-R2

MACOM

Mouser #:

941-GTRB266502FCV1R2

Mfr. #:

GTRB266502FC-V1-R2

Mfr.:

MACOM

Description:

GaN FETs 630W,48V,2620-2690MHz,GaN HEMT (250pcs)

Lifecycle:

Factory Special Order:

Obtain a quote to verify the current price, lead-time and ordering requirements of the manufacturer.

Datasheet:

GTRB266502FC-V1-R2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Brand:	MACOM
Moisture Sensitive:	Yes
Packaging:	Reel
Product Type:	GaN FETs
Factory Pack Quantity:	250
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GTRB266502FC-V1-R2 Datasheet (PDF)

PCN

Product Change Notification 2024-04-25 (PDF)

This functionality requires JavaScript to be enabled.

Compliance Codes

USHTS:: 8541290055
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

MACOM

GaN on SiC Transistors

Next-generation RF power transistors that deliver industry-leading gain, efficiency, and power.

CGHV35400F 400W 50Ω I/O Matched GaN HEMT

Offers high efficiency, high gain, and vast bandwidth capabilities.

CGHV38375F 400W IM GaN on SiC Transistor

400W HPA matched to 50Ω at both input and output ports., 2.75GHz to 3.75GHz frequency.

5G RF JFETs & LDMOS FETs

Thermally enhanced high-power transistors for the next generation of wireless transmission.

GTVA High Power RF GaN on SiC HEMTs

50V RF transistors featuring input matching, high efficiency, and thermally enhanced packages.

Availability

Stock:: Non-Stocked, Call To Request a Quote

An unexpected error occurred. Please try again later.