Advanced Photonix APX-NG000xAPD InGaAs Avalanche Photodiodes (APDs)
Advanced Photonix APX-NG000xAPD InGaAs Avalanche Photodiodes (APDs) are available with 0.2mm and 0.4mm active area diameters and in surface mount TO-46 metal cans. The Advanced Photonix APX-NG000xAPD devices operate at reverse bias voltages ranging from 40V to less than 80V, with a typical bias voltage of 55V. These APDs provide avalanche gains of up to 25. High gain, low noise, and fast response times make these devices ideal for use in optical communication receivers, laser range finders, and low-light-level detection systems operating in the near-infrared wavelength range (1000nm to 1650nm).
Features
- 1000nm to 1650nm spectral range
- 0.2mm and 0.4mm active area diameters
- High avalanche gain up to 25x
- Low noise for accurate detection in low‑light environments
- Fast response times for real‑time sensing and ranging
- 40V to <80V operation range (55V typical bias)
- Wide spectral response for versatile optical detection
- High sensitivity for low‑light and precision measurements
- Fast response time suitable for dynamic sensing environments
- Low dark current minimizes measurement noise
- Low capacitance
- Rugged epoxy package for reliable performance in harsh conditions
- Compact footprint for easy integration into OEM assemblies
- TO-46, surface-mount package
- RoHS-compliant
Applications
- Industrial optical sensing
- Medical and laboratory instrumentation
- Laser measurement systems
- Barcode and optical scanners
- Environmental monitoring devices
- Machine automation and robotics
- Embedded sensor modules
Specifications
- Typical active area
- 0.03mm x 0.03mm for APX-NG0002APD
- 0.13mm x 0.13mm for APX-NG0004APD
- Typical active diameter
- 200µm for APX-NG0002APD
- 400µm for APX-NG0004APD
- 1550nm typical peak wavelength
- 0.95A/W to 9.5A/W typical responsivity range
- Typical capacitance
- 2pF for APX-NG0002APD
- 5pF for APX-NG0004APD
- 35V to 60V breakdown voltage range
- Dark current
- 50nA maximum for APX-NG0002APD, 20nA typical
- 200nA maximum for APX-NG0004APD, 80nA typical
- 0.15V/°C maximum temperature coefficient of the breakdown voltage, 0.12V/°C typical
- Maximum rise time
- 0.4ns for APX-NG0002APD
- 0.8ns for APX-NG0004APD
- -40°C to +85°C operating temperature range
Dimensions
Related Photodiodes
Advanced Photonix Photodiodes
A portfolio of photodiodes for detection across ultraviolet, visible, & near-infrared wavelengths.
Publicado: 2026-04-01
| Actualizado: 2026-04-08