Ampleon ART2K0 LDMOS RF Power Transistors
Ampleon ART2K0 LDMOS RF Power Transistors are based on Advanced Rugged Technology (ART) and designed to cover various ISM, broadcast, and communications applications. The unmatched 2000W LDMOS devices have a frequency range of 1MHz to 400MHz. Designed for broadband operation, the Ampleon ART2K0 transistors deliver high efficiency and excellent thermal stability/ruggedness with no device degradation.
Features
- Based on ART
- High breakdown voltage enables class E operation up to VDS = 53V
- Qualified up to a maximum of VDS = 65V
- Characterized from 30V to 65V to support a wide range of applications
- Excellent ruggedness with no device degradation
- Integrated dual-sided ESD protection enables class C operation and complete switch off of the transistor
- High efficiency
- Excellent thermal stability
- Designed for broadband operation
Applications
- Broadcast
- FM radio
- VHF TVs
- Communications
- Non-cellular communications
- UHF radar
- Industrial, scientific, and medical
- Plasma generators
- MRI systems
- CO2 lasers
- Particle accelerators
Specifications
- Limiting values
- 200V maximum drain-source voltage
- -9V to 13V gate-source voltage range
- +225°C maximum junction temperature
- DC
- 208V typical drain-source breakdown voltage
- 1.5V to 2.5V gate-source threshold voltage range
- 2.8µA maximum drain leakage current
- 77A typical drain cut-off current
- 280nA maximum gate leakage current
- 0.100Ω typical drain-source on-state resistance
- AC
- 1.73pF typical feedback capacitance
- 610pF typical input capacitance
- 181pF typical output capacitance
- RF
- 28.4dB typical power gain
- -13.9dB typical input return loss
- 72.1% typical drain efficiency
- 1MHz to 400MHz frequency range
- 0.077K/W junction-to-case thermal resistance
- Package options
- SOT539AN for ART2K0FE
- SOT539BN for ART2K0FES
- SOT1248C for ART2K0FEG
Resources
- Application Note AN10896 - Mounting and Soldering of RF Transistors in Air Cavity Packages
- Application Note AN221014 - Thermal characteristics of ART LDMOS power transistors
Publicado: 2025-02-12
| Actualizado: 2025-11-11
