iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET is engineered for high-efficiency SMPS and motor drive applications. This MOSFET delivers low RDS(on) and QSW, resulting in lower switching losses and reduced heat dissipation at both full and partial loads. Typical applications include motor control, boost converters, and SMPS control FETs, and secondary side synchronous rectifiers.
Features
- Low RDS(on), QSW, and EOSS
- 100% UIS tested in production
- Minimized heat dissipation at both full and partial loads
- High short-circuit withstand capability (SCWC)
- Available in a TO-220 package
Specifications
- 8.3mΩ maximum drain-to-source on-resistance (RDS(on))
- 200V minimum drain-to-source voltage (VDS)
- 128A continuous drain current, TC=25°C (ID)
- 73nC typical gate charge total (QG)
- 5.2nC typical switching charge (QSW)
- 3µJ typical capacitive stored energy (EOSS)
Applications
- Motor control
- Boost converters and SMPS control FETs
- Secondary side synchronous rectifier
Typical Drain-Source On Resistance
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Publicado: 2026-03-26
| Actualizado: 2026-04-07