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Infineon Technologies CoolSiC™ 1400V SiC G2 MOSFETs

Infineon Technologies CoolSiC™ 1400V Silicon Carbide (SiC) G2 MOSFETs are offered in a TO-247PLUS-4 reflow package. These Infineon MOSFETs are ideal for high-output power applications such as Electric Vehicle (EV) charging, Battery Energy Storage Systems (BESS), Commercial / Construction / Agricultural Vehicles (CAV), and more. The CoolSiC™ MOSFET G2 1400V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package features reflow capability (3x reflow soldering possible), enabling lower thermal resistance.

Features

  • Very low switching losses
  • Package backside is suitable for reflow soldering at +260°C, 3x times
  • Overload operation up to Tvj = +200°C
  • 2µs short circuit withstand time
  • 4.2V benchmark gate threshold voltage
  • Increased power density and system output power
  • Robust against parasitic turn-on, a 0V turn-off gate voltage can be applied
  • Robust body diode for hard commutation
  • Robust against a Miller effect
  • .XT interconnection technology for best-in-class thermal performance
  • Improved overall efficiency
  • Easy paralleling
  • Robust against transient overloads and avalanche conditions
  • Wide 2mm power pins for high current capability
  • Resistive weldable pins for direct busbar connections
  • TO247PLUS (PG-TO247-4-U08) package with a high 10.8mm creepage distance and CTI ≥ 600V
  • Qualified for industrial applications per JEDEC47/20/22
  • Lead-free, Halogen-free, and RoHS-compliant Green device

Applications

  • CAV
  • EV charging
  • Online/industrial uninterrupted power supplies (UPS)
  • String inverters
  • BESS
  • General-purpose drives (GPD)

Specifications

  • 1400V maximum drain-source voltage
  • 5.5V maximum drain-source reverse voltage
  • Continuous DC drain current range
    • 147A to 207A for IMYR140R008M2H
    • 71A to 100A for IMYR140R019M2H
  • 213A (IMYR140R019M2H) or 441A (IMYR140R008M2H) peak drain current
  • Maximum gate-source voltage ranges
    • -10V to 25V transient voltage range
    • -7V to 23V static voltage range
  • Avalanche energy
    • 1159mJ single pulse and 5.8mJ repetitive for IMYR140R008M2H
    • 506mJ single pulse and 2.5mJ repetitive for IMYR140R019M2H
  • 2µs maximum short-circuit time
  • Power dissipation ranges
    • 360W to 710W for IMYR140R008M2H
    • 192W to 385W for IMYR140R019M2H
  • Recommended gate voltage ranges
    • 15V to 18V for IMYR140R008M2H
    • -5V to 0V for IMYR140R019M2H 
  • 23.4mΩ (IMYR140R008M2H) or 53.8mΩ (IMYR140R019M2H) maximum drain-source on-state resistance
  • 5.1V maximum gate-source threshold voltage
  • 300µA (IMYR140R019M2H) or 690µA (IMYR140R008M2H) maximum zero gate-voltage drain current
  • ±120nA maximum gate leakage current
  • 27S (IMYR140R019M2H) or 63S (IMYR140R008M2H) typical forward transconductance
  • 2.1Ω (IMYR140R019M2H) or 4.4Ω (IMYR140R008M2H) typical internal gate resistance
  • Typical capacitances
    • 2860pF (IMYR140R019M2H) or 6450pF (IMYR140R008M2H) input
    • 99pF (IMYR140R019M2H) or 225pF (IMYR140R008M2H) output
    • 9pF (IMYR140R019M2H) or 20pF (IMYR140R008M2H) reverse transfer
  • 172nC (IMYR140R019M2H) or 394nC (IMYR140R008M2H) typical output charge
  • Typical effective output capacitance
    • 197pF (IMYR140R019M2H) or 447pF (IMYR140R008M2H) energy related
    • 215pF (IMYR140R019M2H) or 493pF (IMYR140R008M2H) time related
  • 90nC (IMYR140R019M2H) or 203nC (IMYR140R008M2H) total gate charge
  • 30nC (IMYR140R019M2H) or 67nC (IMYR140R008M2H) plateau gate charge
  • 18nC (IMYR140R019M2H) or 40nC (IMYR140R008M2H) gate-to-drain charge
  • Typical time
    • 9ns (IMYR140R019M2H) or 31ns (IMYR140R008M2H) turn-on delay
    • 4.7ns (IMYR140R019M2H) or 17ns (IMYR140R008M2H) rise
    • 23ns (IMYR140R019M2H) or 80ns (IMYR140R008M2H) turn-on delay
    • 9.5ns (IMYR140R019M2H) or 34ns (IMYR140R008M2H) fall
  • Typical energy at +25°C
    • 548µJ (IMYR140R019M2H) or 2720µJ (IMYR140R008M2H) turn-on
    • 120µJ (IMYR140R019M2H) or 1980µJ (IMYR140R008M2H) turn-off
    • 918µJ (IMYR140R019M2H) or 5100µJ (IMYR140R008M2H) total switching
  • 0.13µC (IMYR140R019M2H) or 0.18µC (IMYR140R008M2H) typical MOSFET forward recovery charge at +25°C
  • 9.6A (IMYR140R019M2H) or 16A (IMYR140R008M2H) typical MOSFET peak forward recovery current at +25°C
  • 250µJ (IMYR140R019M2H) or 400µJ (IMYR140R008M2H) typical MOSFET peak forward recovery energy at +25°C
  • Thermal resistance
    • 62K/W maximum junction-to-ambient
    • 0.21K/W to 0.39K/W maximum MOSFET/body diode junction-to-case range
  • +260°C maximum soldering temperature
  • Up to 5000x cycles lifetime

Datasheets

Schematic

Schematic - Infineon Technologies CoolSiC™ 1400V SiC G2 MOSFETs
Publicado: 2025-09-25 | Actualizado: 2025-11-03