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Kingston DDR4 DRAMs

Kingston DDR4 DRAMs feature a high-speed option with low power consumption. The 512M x 16 DRAMs offer an 8Gb capacity and double data rate architecture. The devices support a power-saving mode, gear-down mode, and Dynamic-On-Die termination. The DDR4 DRAMs are designed for embedded applications in a 96-ball FBGA package. Typical applications include industrial IoT/robotics and factory automation, ATMs, medical devices, vending machines, and smart homes.

Features

  • Double-data-rate architecture of two data transfers per clock cycle
  • High-speed data transfer is realized by the 8-bit prefetch pipelined architecture
  • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
  • DQS is edge-aligned with data for READs, center-aligned with data for WRITEs
  • Differential clock inputs (CK_t and CK_c)
  • DLL aligns DQ and DQS transitions with CK transitions
  • Data mask (DM) write data in at both the rising and falling edges of the data strobe
  • Supports write Cycle Redundancy Code (CRC)
  • Supports programmable preamble for read/write
  • Programmable burst length 4/8 with both nibble sequential and interleave mode
  • BL switch on the fly
  • Driver strength selected by MRS
  • Dynamic On-Die Termination supported
  • Asynchronous RESET pin supported
  • Two Termination States, such as RTT_PARK and RTT_NOM, switchable by ODT pin
  • ZQ calibration supported
  • Write Levelization supported
  • Internal Vref DQ level generation is available
  • Supports Temperature Controlled Auto Refresh (TCAR) mode
  • Supports Low Power Auto Self Refresh (LP ASR) mode
  • Supports Command Address (CA) parity (command/address) mode
  • Per DRAM Addressability (PDA)
  • Fine-granularity refresh is supported
  • Supports geardown mode (1/2 rate, 1/4 rate)
  • Supports self-refresh abort
  • Supports maximum power-saving mode
  • Banks grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
  • DMI pin support for write data masking and DBIdc functionality
  • RoHS compliant

Applications

  • Industrial IoT/robotics and factory automation
  • 5G networking/telecommunications communication modules
    • Wi-Fi® Routers
    • Mesh devices
  • Smart City
    • HVAC
    • Lighting
    • Power monitoring/metering
    • Parking meters
  • Office equipment
  • Medical devices
  • ATMs
  • Vending machines
  • Smart Homes
    • Sound Bars
    • Thermostats
    • Fitness equipment
    • Vacuums
    • Beds
    • Faucets

Associated DRAM Components

Embedded DRAM Components

Kingston Embedded DRAM Components

Includes 1.2V and 1.35V low-voltage variants to meet the requirements of embedded devices.

Learn Moreacerca de Kingston Embedded DRAM Components View Productsrelacionado con Kingston Embedded DRAM Components

Resource

View Results ( 4 ) Page
N.º de artículo Hoja de datos Descripción Temperatura de trabajo máxima
D5116AN9CXGRK-U DRAM 8Gb 96 ball FBGA DDR4 2666 + 95 C
D5116AN9CXGXN-U DRAM 8Gb 96 ball FBGA DDR4 3200 + 95 C
D5116AN9CXGXNY-U DRAM 96-Ball 512Mx16 8Gb DDR4 3200 AUTO TEMP -40C to 105C + 105 C
D5116AN9CXGXNI-U DRAM 8Gb 96 ball FBGA DDR4 3200 IT + 95 C
Publicado: 2022-11-16 | Actualizado: 2025-08-02