Microchip Technology 1200V SIC MOSFETs

Microchip Technology 1200V SIC MOSFETs offer high efficiency in a lighter, more compact solution. The devices supply low internal gate resistance (ESR), resulting in a fast switching speed. The MOSFETs are simple to drive and easy to parallel, with improved thermal capabilities and lower switching losses.

The Microchip 1200V SIC MOSFETs eliminate the need for an external freewheeling diode and provide superior avalanche ruggedness in a fast and reliable body diode.

The TO-247-4 Notch package enables efficient, high-power designs with improved thermal performance and reduced parasitic effects. Its four-lead layout includes a Kelvin source to reduce gate ringing and switching losses, while the Notch design enhances creepage distance for improved high-voltage reliability.

The QDPAK package is a compact, surface-mount, top-side cooled solution designed to maximize the performance advantages of silicon carbide devices in high-power applications. It enables a direct thermal path from the device to an external heatsink, decoupling heat dissipation from the PCB and improving thermal performance, power density, and layout flexibility. The package also reduces parasitic inductance, supports fast switching, and simplifies automated assembly, while its emerging industry‑standard footprint allows scalable, multi-source designs and reduced system complexity.

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = 175°C
  • Fast and reliable body diode
  • Superior avalanche ruggedness (100% UIS production tested)
  • Creepage distance (typ. >8mm)

Applications

  • Photovoltaic (PV) inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger
  • Power supply and distribution

Typical Application

Application Circuit Diagram - Microchip Technology 1200V SIC MOSFETs
View Results ( 22 ) Page
N.º de artículo Hoja de datos Rds On - Resistencia entre drenaje y fuente Id - Corriente de drenaje continua
MSC020SMB120B4N MSC020SMB120B4N Hoja de datos 24 mOhms 97 A
MSC025SMB120B4N MSC025SMB120B4N Hoja de datos 33 mOhms 81 A
MSC040SMB120B4N MSC040SMB120B4N Hoja de datos 53 mOhms 54 A
MSC045SMB120B4N MSC045SMB120B4N Hoja de datos 60 mOhms 49 A
MSC060SMB120B4N MSC060SMB120B4N Hoja de datos 80 mOhms 38 A
MSC080SMB120B4N MSC080SMB120B4N Hoja de datos 107 mOhms 30 A
MSC030SMB120B4N MSC030SMB120B4N Hoja de datos 40 mOhms 69 A
MSC025SMB120Q MSC025SMB120Q Hoja de datos 25 mOhms
MSC030SMB120Q MSC030SMB120Q Hoja de datos 30 mOhms
MSC045SMB120Q MSC045SMB120Q Hoja de datos 45 mOhms
Publicado: 2025-09-19 | Actualizado: 2026-10-12