onsemi NXH0xxP120M3F1 Silicone Carbide (SiC) Modules
onsemi NXH0xxP120M3F1 Silicone Carbide (SiC) Modules contain 8mΩ/1200V, 10mΩ/1200V, 15mΩ/1200V, and 30mΩ/1200V M3S SiC MOSFETs based on half-bridge topology and a thermistor in a F1 package. These modules feature pre-applied Thermal Interface Material (TIM) and without pre-applied TIM. The NXH0xxP120M3F1 modules are designed with press-fit pins and are Pb-free, Halide-free, and RoHS-compliant. These power modules are used in solar inverters, industrial power, Electric Vehicle (EV) charging stations, and Uninterruptible Power Supplies (UPS).
Features
- 8mΩ/1200V M3S SiC MOSFET (NXH008P120M3F1)
- 10mΩ/1200V M3S SiC MOSFET (NXH010P120M3F1)
- 15mΩ/1200V M3S SiC MOSFET (NXH015P120M3F1)
- 30mΩ/1200V M3S SiC MOSFET (NXH030P120M3F1)
- Options with pre-applied Thermal Interface Material (TIM) and without pre-applied TIM
- Half-bridge topology
- Thermistor
- Press-fit pins
- Pb-free, Halide-free, and RoHS compliant
Applications
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Industrial power
- Electric Vehicle (EV) charging stations
Schematic
Related Module
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onsemi NXH010P120MNF1 SiC Module
Contains a 10Mohm 1200V SiC MOSFET half-bridge and an NTC thermistor in an F1 module.
Publicado: 2024-07-31
| Actualizado: 2024-08-28