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onsemi Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are designed for compact and efficient designs with a small footprint. These power MOSFETs feature low RDS(ON), low QG, and capacitance, which minimize conduction and driver losses. These MOSFETs are available in 40V, 60V, and 80V drain-to-source voltages and a ±20V gate-to-source voltage. The onsemi Single N-Channel Power MOSFETs are Pb-free and RoHS compliant.

Features

  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • Available in a wide range of package types, including DFN5, DFNW5, LFPK-4, TCPAK57, WDFN8, WDFN9, and WDFNW8 
  • Small footprint for compact designs
  • Pb-free
  • RoHS-compliant

Specifications

  • 40V, 60V, or 80V drain-source breakdown voltage
  • 14A to 253A continuous drain current
  • 1.43mΩ to 67mΩ drain-source on-resistance
  • 2V to 4V gate-source threshold voltage
  • 23W to 194W power dissipation
  • Up to +175°C maximum operating temperature

Simplified Block Diagram

Block Diagram - onsemi Single N-Channel Power MOSFETs
View Results ( 34 ) Page
N.º de artículo Hoja de datos Descripción Id - Corriente de drenaje continua
NTMFS4D7N04XMT1G NTMFS4D7N04XMT1G Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE 66 A
NTTFSSCH0D7N02X NTTFSSCH0D7N02X Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) T10 25V PC33 SOURCE DOWN 310 A
NTTFSSH1D3N04XL NTTFSSH1D3N04XL Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) T10S 40V PC33 SOURCE DOWN GEN 2 207 A
NVMFWS1D3N04XMT1G NVMFWS1D3N04XMT1G Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE 195 A
NVMFWS0D63N04XMT1G NVMFWS0D63N04XMT1G Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE 384 A
NTTFS1D4N04XMTAG NTTFS1D4N04XMTAG Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN U8FL PACKAGE 178 A
NTTFS4D9N04XMTAG NTTFS4D9N04XMTAG Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN U8FL PACKAGE 65 A
NVMFWS004N04XMT1G NVMFWS004N04XMT1G Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE 66 A
NVMFWS0D6N04XMT1G NVMFWS0D6N04XMT1G Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL GEN 2 PACKAGE 380 A
NVMFWS1D1N04XMT1G NVMFWS1D1N04XMT1G Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE 233 A
Publicado: 2023-12-20 | Actualizado: 2025-10-30