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ROHM Semiconductor RBx8 Schottky Barrier Diodes

ROHM Semiconductor RBx8 Schottky Barrier Diodes with silicon epitaxial planar structure offer up to 1A average rectified forward current. These diodes feature high reliability, low IR, and up to 5A peak forward surge current. The RBx8 Schottky barrier diodes can be stored in a -55°C to 150°C temperature range. These diodes are ideal for general rectification applications.

Features

  • Up to 1A average rectified forward current
  • High reliability
  • Low IR
  • Up to 5A peak forward surge current
  • -55°C to 150°C storage temperature range
  • AEC-Q101 qualified (RB178VYM-40FH, RB178VYM-60FH, RB568VYM150FH, and RB588VYM100FH)
  • Ideal for general rectification

Datasheets

View Results ( 8 ) Page
N.º de artículo If - Corriente directa Ifsm - Sobrecorriente en sentido directo Ir - Corriente inversa Vf - Tensión directa Vr - Tensión inversa Vrrm - Tensión inversa repetitiva
RB178VAM-40TR 1 A 5 A 300 nA 790 mV 40 V 40 V
RB178VYM-40FHTR 1 A 5 A 300 nA 790 mV 40 V 40 V
RB568VAM150TR 500 mA 3 A 400 nA 950 mV 150 V 150 V
RB568VYM150FHTR 500 mA 3 A 400 nA 950 mV 150 V 150 V
RB588VAM100TR 700 mA 150 nA 850 mV 100 V 100 V
RB588VYM100FHTR 700 mA 5 A 150 nA 850 mV 100 V 100 V
RB178VAM-60TR 1 A 5 A 800 nA 820 mV 60 V 60 V
RB178VYM-60FHTR 1 A 5 A 800 nA 820 mV 60 V 60 V
Publicado: 2025-05-20 | Actualizado: 2025-06-26