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ROHM Semiconductor YQ30NL10SDFH Schottky Barrier Diode

ROHM Semiconductor YQ30NL10SDFH Schottky Barrier Diode is a high-reliability component designed with a power mold type structure. The ROHM Semiconductor YQ30NL10SDFH features low VF (forward voltage) and low IR (reverse current) characteristics, ensuring efficient performance. With low capacitance and a trench MOS structure, the device excels in various applications, including switching power supplies, freewheel diodes, and reverse polarity protection. The absolute maximum ratings, specified at TC=25°C, highlight the robust design for reliable operation in diverse electronic systems.

Features

  • High reliability
  • Power mold type 
  • Low VF and low IR 
  • Low capacitance
  • Trench MOS structure
  • Absolute maximum ratings (TC=25°C unless otherwise specified)

Applications

  • Switching power supplies
  • Freewheel diodes
  • Reverse polarity protection 

Inner Circuit

ROHM Semiconductor YQ30NL10SDFH Schottky Barrier Diode
Publicado: 2024-01-19 | Actualizado: 2024-01-24