Renesas Electronics RTDACHB0000RS-MF-1 Evaluation Kit
Renesas Electronics RTDACHB0000RS-MF-1 Evaluation Kit supports flexible experimentation with gallium nitride (GaN) bidirectional switch (BDS) modulation and operation. This kit offers GaN BDS (TP65B110HRU), MCUs, and an OpAmp. The RTDACHB0000RS-MF-1 provides a half-bridge GaN configuration that serves as a building block for multiple power topologies. This kit offers multiple options to drive the HB, including MCU-based PWM generation and user-supplied PWM signals. The Renesas Electronics RTDACHB0000RS-MF-1 kit features onboard AC zero‑cross detection and ZVS soft‑switching operation.
Features
- Half-bridge BDS GaN configuration
- Key components:
- GaN BDS (TP65B110HRU)
- MCUs
- OpAmp
- Flexible platform to experience GaN BDS modulation and operation
- Multiple options to drive the HB:
- MCU-based PWM generation
- User-supplied PWM signals
- Onboard AC zero-cross detection
- ZVS soft switching operation
Board Overview
Application Circuit Diagram
Related Switch
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)
650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.
Additional Resource
Publicado: 2026-03-16
| Actualizado: 2026-03-29