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STMicroelectronics STGHU30M65DF2AG Automotive-Grade IGBT

STMicroelectronics STGHU30M65DF2AG Automotive-Grade IGBT is developed using an advanced trench gate field stop structure. The STMicroelectronics STGHU30M65DF2AG offers an ideal balance of inverter performance and efficiency, with low power loss and short-circuit protection. The positive VCE(sat) temperature coefficient and consistent parameter distribution enhance safe paralleling operation.

Features

  • AEC-Q101 qualified
  • TJ = +175°C maximum junction temperature
  • 6μs minimum short-circuit withstand time
  • VCE(sat) = 1.6V (typ.) at IC = 30A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Packing HU3PAK tape and reel
  • Soft and very fast-recovery antiparallel diode
  • Excellent switching performance thanks to the extra driving Kelvin pin

Applications

  • Automotive motor control
  • e-compressors
  • Industrial motor control
  • Power supplies and converters

Circuit Diagram

Application Circuit Diagram - STMicroelectronics STGHU30M65DF2AG Automotive-Grade IGBT

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STMicroelectronics Standard Products

A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.

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Publicado: 2024-09-06 | Actualizado: 2024-09-12