Vishay / Siliconix SiHR080N60E N-Channel Power MOSFET
Vishay / Siliconix SiHR080N60E N-Channel Power MOSFET is a fourth-generation 600V E series power MOSFET in a PowerPAK® 8 x 8LR package. The MOSFET provides higher efficiency and power density for telecom, industrial, and computing applications. The SiHR080N60E features a low typical on-resistance of 0.074Ω at 10V and ultra-low gate charge down to 42nC, resulting in reduced conduction and switching losses, which save energy and increase efficiency in power systems >2kW. The package also provides a Kelvin connection for improved switching efficiency. The Vishay / Siliconix SiHR080N60E is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.Features
- 4th generation E series technology
- Low figure of merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Top-side cooling
- Avalanche energy rated (UIS)
- Gullwing leads provide excellent temperature cycle capability
- Lead-free, Halogen-free, and RoHS-compliant
Applications
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction (PFC) power supplies
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)
Specifications
- 600V maximum drain-source voltage
- ±30V maximum gate-source voltage
- Maximum continuous drain current at VGS = 10V
- 51A at +25°C
- 32A at +100°C
- 96A maximum pulsed drain current
- 4.0W/°C maximum linear derating factor
- 173mJ maximum single pulse avalanche energy
- 500W maximum power dissipation
- 100V/ns maximum drain-source voltage slope at +125°C
- 10V/ns maximum reverse diode dv/dt
- Maximum thermal resistance
- 42°C/W junction-to-ambient
- 0.25°C/W junction-to-case (drain)
- -55°C to +150°C operating junction temperature range
- PowerPAK 8 x 8LR package
Dimensions
Publicado: 2024-07-09
| Actualizado: 2024-07-12
