STMicroelectronics EVALSTDRV600HB8 Development Board
STMicroelectronics EVALSTDRV600HB8 Development Board is designed for L638xE and L639x high voltage gate drivers. The L638xE and L639x drivers are single-chip half-bridge gate drivers for N-channel power MOSFET or IGBT. These L638xE and L639x drivers are high voltage devices manufactured with BCD™ "offline" technology.
The EVALSTDRV600HB8 board consists of two samples (L638xE and L639x) in the SO8 package allows evaluating gate driver features and functionalities with voltage rating up to 600V. This SO8 package also supports several high voltages, high-side, and low-side driver devices. The development board also comes with passive components such as filtering, bootstrap capacitor, and integrated bootstrap diode designed to allow more compact and cost-effective.
Features
- Half-bridge configuration
- 600V high voltage rail
- Includes samples of each compatible gate driver in SO8 package
- L6385E, L6387E, L6388E, L6389E, L6395, L6398, and L6399
- Compatible with MOSFETs or IGBTs in ±50V/ns dv/dt transient immunity in full temperature range
- Integrated bootstrap diode
- Dedicated high-side and low-side driving inputs
- Compact and simplified layout
- Gate drivers in the kit feature different functionalities and characteristics:
- UVLO on both high-side and low-side
- Internal deadtime or no deadtime
- Interlocking for anti cross-conduction protection
- Ability to drive asymmetrical half-bridges and switched reluctance motors
- Active high or active low Local Interconnect Network (LIN) for single input gate driving
Associated Product
STMicroelectronics L638xE & L639x Gate Drivers
Designed to stand a voltage rail up to 600V in high-side (floating) section MOSFET or IGBT devices.
Publicado: 2017-11-24
| Actualizado: 2022-06-23