IXFT120N30X3HV

IXYS
747-IXFT120N30X3HV
IXFT120N30X3HV

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO268 300V 120A N-CH X3CLASS

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En existencias: 2,049

Existencias:
2,049
Se puede enviar inmediatamente
En pedido:
1,140
Se espera el 16/11/2026
Plazo de entrega de fábrica:
27
Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$24.12 $24.12
$18.01 $180.10
$15.57 $1,868.40
$14.74 $7,517.40
1,020 Presupuesto

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
Si
SMD/SMT
D3PAK-3 (TO-268-3)
N-Channel
1 Channel
300 V
120 A
11 mOhms
- 20 V, 20 V
4.5 V
170 nC
- 55 C
+ 150 C
735 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
País de ensamblaje: Not Available
País de difusión: KR
País de origen: KR
Tiempo de caída: 14 ns
Transconductancia hacia delante - Mín.: 60 S
Sensibles a la humedad: Yes
Tipo de producto: MOSFETs
Tiempo de subida: 30 ns
Cantidad de empaque de fábrica: 30
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo de retardo de apagado típico: 130 ns
Tiempo típico de demora de encendido: 30 ns
Peso de la unidad: 4 g
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Atributos seleccionados: 0

Hoja de datos

PCN

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CNHTS:
8541290000
TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

X3-Class Power MOSFETs with HiPerFET™

IXYS X3-Class Power MOSFETs with HiPerFET™ are avalanche-rated fast intrinsic diodes with N-channel enhancement mode. These MOSFETs feature low RDS(ON), low gate charge (QG), and high-power density. IXYS X3-Class 200V-300V Power MOSFETs with HiPerFET remove leftover energies during high-speed switching to avoid device failure. Typical applications include DC-to-DC converters, power supplies, robotics, servo controls, and battery chargers for light electric vehicles.

X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

Solar Inverters & Battery Energy Storage Systems

Littelfuse Solar Inverters and Battery Energy Storage Systems (BESS) can operate in both AC and DC coupled solar systems. The AC coupled solar system features two inverters, offering higher flexibility and easier installation. DC coupled solar systems have a single inverter and provide higher efficiency because the shorter cables between BESS and PV reduce losses. Littelfuse Solar Inverters and BESS components include TVS diodes, MOSFETs, IGBT drivers, fuses, relays, and more.

Heat Pumps

Littelfuse provides a broad portfolio of components for heat pumps, including fuses, TVS diodes, gate drivers, and more. The heat pump market is growing quickly, driven by government initiatives to reduce greenhouse gas emissions and rising energy costs. With inverter-driven motors improving system efficiencies, heat pumps can now be used in a wide range of climates. Learn how Littelfuse technologies make heat pumps safer, more reliable, and more energy efficient. Heat pumps can be used in a wide range of climates due to the inverter-driven motors improving system efficiencies. These components are suitable for various applications such as energy management, security systems, HVAC systems, smoke detectors, and IoT-controlled appliances. Littelfuse offers protect, control, and sense technologies to improve buildings' reliability, safety, and energy efficiency.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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