MMIX1T600N04T2

IXYS
747-MMIX1T600N04T2
MMIX1T600N04T2

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V 600A

Hoja de datos:
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Disponibilidad

Existencias:
No en existencias
Plazo de entrega de fábrica:
25 Semanas Tiempo estimado de producción de fábrica.
Mínimo: 300   Múltiples: 20
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$31.97 $9,591.00

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SMPD-24
N-Channel
1 Channel
40 V
600 A
1.3 mOhms
- 20 V, 20 V
1.5 V
590 nC
- 55 C
+ 175 C
830 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
Tipo de producto: MOSFETs
Serie: MMIX1T600N04
Cantidad de empaque de fábrica: 20
Subcategoría: Transistors
Peso de la unidad: 8 g
Productos encontrados:
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Atributos seleccionados: 0

Hoja de datos

PCN

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Códigos de cumplimiento
CNHTS:
8541290000
CAHTS:
8541900000
USHTS:
8541290065
JPHTS:
8542900006
TARIC:
8541900000
MXHTS:
8541900299
ECCN:
EAR99
Clasificaciones de origen
País de origen:
Filipinas
País de origen del ensamblaje:
No disponible
País de difusión:
No disponible
El país está sujeto a cambios en el momento del envío.

HiPerFET and MOSFET Power Devices

IXYS HiPerFET and MOSFET Power Devices are available in the SMPD package, which is much lighter (typically by 50%) than comparable conventional power modules. This enables the designer to create lower-weight power systems. Due to its compact and ultra-low profile package, it is possible to use the same heat sink for multiple devices, which saves PCB space. An added benefit of being smaller and lighter is that it provides better protection against vibrations and g-forces, especially if used in portable appliances. This benefit also increases the life expectancy and reliability of the devices.

Surface Mount Power Device (SMPD)

IXYS Surface Mount Power Devices (SMPD) provide an innovative solution that allows for many design optimization opportunities across a large number of power electronics applications. Weighing only 8g, the SMPD Package is typically lighter by 50% than comparable conventional power modules, thereby enabling lower weight power systems. Due to their internal insulation by DCB, it is possible to use the same heat sink for multiple devices, reducing thermal management efforts. An added benefit of being smaller and lighter is that it provides higher robustness against vibrations and g-forces, especially if used in portable appliances, increasing the life expectancy and reliability of these devices.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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