TK160F10N1L,LQ
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757-TK160F10N1LLQ
TK160F10N1L,LQ
Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) U-MOSVIII-H 100V 160A 122nC MOSFET
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) U-MOSVIII-H 100V 160A 122nC MOSFET
Hoja de datos:
En existencias: 18,984
-
Existencias:
-
18,984 Se puede enviar inmediatamenteSe ha producido un error inesperado. Vuelva a intentarlo más tarde.
-
Plazo de entrega de fábrica:
-
32 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Precio (USD)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| $2.70 | $2.70 | |
| $2.18 | $21.80 | |
| $1.59 | $159.00 | |
| $1.56 | $780.00 | |
| Envase tipo carrete completo (pedir en múltiplos de 1000) | ||
| $1.32 | $1,320.00 | |
| $1.27 | $6,350.00 | |
Hoja de datos
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2