TK20E60W,S1VX
Las imágenes son para referencia solamente
Ver especificaciones del producto
Ver especificaciones del producto
757-TK20E60WS1VX
TK20E60W,S1VX
Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch DTMOSIV 600 V 165W 1680pF 20A
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch DTMOSIV 600 V 165W 1680pF 20A
Hoja de datos:
En existencias: 68
-
Existencias:
-
68 Se puede enviar inmediatamenteSe ha producido un error inesperado. Vuelva a intentarlo más tarde.
Precio (USD)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| $7.02 | $7.02 | |
| $3.78 | $37.80 | |
| $3.46 | $346.00 | |
| $3.44 | $1,720.00 |
Hoja de datos
Application Notes
- Basics of Operational Amplifiers and Comparators
- Designing of Low Power Op Amps for Dust Sensor
- Impacts of the dv/dt Rate on MOSFETs
- Low-Noise CMOS Operational Amplifider Ideal for Sensor Signal Amplification
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Signal Gain and Noise Gain of the Op-Amp
- Tips for Selecting Level Shifters (Voltage Translation ICs)
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
