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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V N-Ch QFET Logic Level
- FQD19N10LTM
- onsemi
-
1:
$1.59
-
30,379En existencias
|
N.º de artículo de Mouser
512-FQD19N10LTM
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V N-Ch QFET Logic Level
|
|
30,379En existencias
|
|
|
$1.59
|
|
|
$1.01
|
|
|
$0.669
|
|
|
$0.527
|
|
|
$0.48
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|
|
$0.436
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|
Min.: 1
Mult.: 1
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|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
15.6 A
|
100 mOhms
|
- 20 V, 20 V
|
1 V
|
18 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
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|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200V N-Ch adv QFET V2 Series
- FQD18N20V2TM
- onsemi
-
1:
$1.94
-
22,884En existencias
|
N.º de artículo de Mouser
512-FQD18N20V2TM
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200V N-Ch adv QFET V2 Series
|
|
22,884En existencias
|
|
|
$1.94
|
|
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$1.24
|
|
|
$0.836
|
|
|
$0.663
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|
|
$0.607
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|
|
$0.577
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|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
200 V
|
15 A
|
140 mOhms
|
- 30 V, 30 V
|
3 V
|
26 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V P-Channel QFET
- FQD8P10TM
- onsemi
-
1:
$1.20
-
17,675En existencias
|
N.º de artículo de Mouser
512-FQD8P10TM
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V P-Channel QFET
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17,675En existencias
|
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$1.20
|
|
|
$0.758
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|
|
$0.499
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|
|
$0.388
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|
|
$0.312
|
|
|
Ver
|
|
|
$0.352
|
|
|
$0.299
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|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
100 V
|
6.6 A
|
530 mOhms
|
- 30 V, 30 V
|
4 V
|
15 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) -150V P-Channel QFET
- FDMC2523P
- onsemi
-
1:
$1.75
-
12,191En existencias
|
N.º de artículo de Mouser
512-FDMC2523P
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) -150V P-Channel QFET
|
|
12,191En existencias
|
|
|
$1.75
|
|
|
$1.34
|
|
|
$0.977
|
|
|
$0.802
|
|
|
$0.664
|
|
|
Ver
|
|
|
$0.781
|
|
|
$0.646
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
Power-33-8
|
P-Channel
|
1 Channel
|
150 V
|
3 A
|
1.5 Ohms
|
- 30 V, 30 V
|
5 V
|
9 nC
|
- 55 C
|
+ 150 C
|
42 W
|
Enhancement
|
QFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V P-Channel QFET
- FQB34P10TM
- onsemi
-
1:
$3.92
-
858En existencias
-
3,819Se espera el 23/02/2026
|
N.º de artículo de Mouser
512-FQB34P10TM
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V P-Channel QFET
|
|
858En existencias
3,819Se espera el 23/02/2026
|
|
|
$3.92
|
|
|
$2.58
|
|
|
$1.81
|
|
|
$1.51
|
|
|
$1.51
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
P-Channel
|
1 Channel
|
100 V
|
33.5 A
|
60 mOhms
|
- 25 V, 25 V
|
4 V
|
110 nC
|
- 55 C
|
+ 175 C
|
3.75 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH/600V/2A/A.QFET
- FQD2N60CTM
- onsemi
-
1:
$1.26
-
918En existencias
-
2,500Se espera el 27/03/2026
|
N.º de artículo de Mouser
512-FQD2N60CTM
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH/600V/2A/A.QFET
|
|
918En existencias
2,500Se espera el 27/03/2026
|
|
|
$1.26
|
|
|
$0.807
|
|
|
$0.532
|
|
|
$0.424
|
|
|
$0.338
|
|
|
Ver
|
|
|
$0.383
|
|
|
$0.334
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
1.9 A
|
3.6 Ohms
|
- 30 V, 30 V
|
2 V
|
12 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200V P-Channel QFET
- FQD7P20TM
- onsemi
-
1:
$1.68
-
55En existencias
-
4,500Se espera el 23/02/2026
|
N.º de artículo de Mouser
512-FQD7P20TM
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200V P-Channel QFET
|
|
55En existencias
4,500Se espera el 23/02/2026
|
|
|
$1.68
|
|
|
$1.03
|
|
|
$0.717
|
|
|
$0.567
|
|
|
$0.524
|
|
|
$0.489
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
200 V
|
5.7 A
|
690 mOhms
|
- 30 V, 30 V
|
5 V
|
25 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200V N-Channel Advance Q-FET
- FQPF19N20C
- onsemi
-
1:
$2.25
-
1,708En existencias
|
N.º de artículo de Mouser
512-FQPF19N20C
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200V N-Channel Advance Q-FET
|
|
1,708En existencias
|
|
|
$2.25
|
|
|
$1.01
|
|
|
$0.921
|
|
|
$0.802
|
|
|
Ver
|
|
|
$0.744
|
|
|
$0.709
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
200 V
|
19 A
|
170 mOhms
|
- 30 V, 30 V
|
2 V
|
53 nC
|
- 55 C
|
+ 150 C
|
43 W
|
Enhancement
|
QFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH/900V/7A/A.QFET
- FQAF11N90C
- onsemi
-
1:
$5.62
-
54En existencias
|
N.º de artículo de Mouser
512-FQAF11N90C
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH/900V/7A/A.QFET
|
|
54En existencias
|
|
|
$5.62
|
|
|
$3.17
|
|
|
Ver
|
|
|
$2.73
|
|
|
$2.61
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-3PF-3
|
N-Channel
|
1 Channel
|
900 V
|
7.2 A
|
1.1 Ohms
|
- 30 V, 30 V
|
3 V
|
80 nC
|
- 55 C
|
+ 150 C
|
120 W
|
Enhancement
|
QFET
|
Tube
|
|
