|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
- BSZ075N08NS5ATMA1
- Infineon Technologies
-
1:
$2.33
-
61,773En existencias
|
N.º de artículo de Mouser
726-BSZ075N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
|
|
61,773En existencias
|
|
|
$2.33
|
|
|
$1.34
|
|
|
$1.01
|
|
|
$0.88
|
|
|
$0.879
|
|
|
$0.879
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
40 A
|
8.5 mOhms
|
- 20 V, 20 V
|
3 V
|
24 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2
- IPB020N08N5ATMA1
- Infineon Technologies
-
1:
$5.52
-
885En existencias
|
N.º de artículo de Mouser
726-IPB020N08N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2
|
|
885En existencias
|
|
|
$5.52
|
|
|
$3.42
|
|
|
$2.62
|
|
|
$2.34
|
|
|
$2.19
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
80 V
|
120 A
|
2.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
133 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 95A TDSON-8
- BSC052N08NS5ATMA1
- Infineon Technologies
-
1:
$2.52
-
15,146En existencias
|
N.º de artículo de Mouser
726-BSC052N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 95A TDSON-8
|
|
15,146En existencias
|
|
|
$2.52
|
|
|
$1.59
|
|
|
$1.24
|
|
|
$1.01
|
|
|
Ver
|
|
|
$0.816
|
|
|
$1.00
|
|
|
$0.965
|
|
|
$0.816
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
95 A
|
7.6 mOhms
|
- 20 V, 20 V
|
2.2 V
|
32 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
- BSZ084N08NS5ATMA1
- Infineon Technologies
-
1:
$2.14
-
10,762En existencias
|
N.º de artículo de Mouser
726-BSZ084N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
|
|
10,762En existencias
|
|
|
$2.14
|
|
|
$1.27
|
|
|
$0.886
|
|
|
$0.733
|
|
|
Ver
|
|
|
$0.60
|
|
|
$0.643
|
|
|
$0.633
|
|
|
$0.60
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
40 A
|
11.9 mOhms
|
- 20 V, 20 V
|
2.2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LV POWER MOS
- BSC009NE2LS5IATMA1
- Infineon Technologies
-
1:
$2.83
-
21,515En existencias
|
N.º de artículo de Mouser
726-BSC009NE2LS5IATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LV POWER MOS
|
|
21,515En existencias
|
|
|
$2.83
|
|
|
$1.70
|
|
|
$1.24
|
|
|
$1.03
|
|
|
Ver
|
|
|
$0.893
|
|
|
$0.957
|
|
|
$0.924
|
|
|
$0.893
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
100 A
|
950 uOhms
|
- 16 V, 16 V
|
1.2 V
|
36 nC
|
- 55 C
|
+ 150 C
|
74 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A TDSON-8
- BSC026N08NS5ATMA1
- Infineon Technologies
-
1:
$4.13
-
4,956En existencias
|
N.º de artículo de Mouser
726-BSC026N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A TDSON-8
|
|
4,956En existencias
|
|
|
$4.13
|
|
|
$2.62
|
|
|
$1.91
|
|
|
$1.59
|
|
|
$1.53
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
100 A
|
3.9 mOhms
|
- 20 V, 20 V
|
2.2 V
|
74 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 82A TDSON-8
- BSC061N08NS5ATMA1
- Infineon Technologies
-
1:
$2.75
-
5,610En existencias
|
N.º de artículo de Mouser
726-BSC061N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 82A TDSON-8
|
|
5,610En existencias
|
|
|
$2.75
|
|
|
$1.68
|
|
|
$1.19
|
|
|
$0.987
|
|
|
Ver
|
|
|
$0.832
|
|
|
$0.891
|
|
|
$0.877
|
|
|
$0.832
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
82 A
|
6.1 mOhms
|
- 20 V, 20 V
|
2.2 V
|
27 nC
|
- 55 C
|
+ 150 C
|
74 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 49A TDSON-8
- BSC117N08NS5ATMA1
- Infineon Technologies
-
1:
$2.06
-
17,405En existencias
|
N.º de artículo de Mouser
726-BSC117N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 49A TDSON-8
|
|
17,405En existencias
|
|
|
$2.06
|
|
|
$1.30
|
|
|
$0.886
|
|
|
$0.704
|
|
|
$0.612
|
|
|
$0.571
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
49 A
|
11.7 mOhms
|
- 20 V, 20 V
|
2.2 V
|
15 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2
- IPB017N08N5ATMA1
- Infineon Technologies
-
1:
$6.95
-
1,896En existencias
|
N.º de artículo de Mouser
726-IPB017N08N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2
|
|
1,896En existencias
|
|
|
$6.95
|
|
|
$4.75
|
|
|
$3.48
|
|
|
$3.35
|
|
|
$3.13
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
80 V
|
120 A
|
1.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
223 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LV POWER MOS
- BSC009NE2LS5ATMA1
- Infineon Technologies
-
1:
$2.38
-
10,698En existencias
|
N.º de artículo de Mouser
726-BSC009NE2LS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LV POWER MOS
|
|
10,698En existencias
|
|
|
$2.38
|
|
|
$1.50
|
|
|
$1.04
|
|
|
$0.829
|
|
|
Ver
|
|
|
$0.697
|
|
|
$0.746
|
|
|
$0.734
|
|
|
$0.697
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
100 A
|
1.25 mOhms
|
- 16 V, 16 V
|
1.2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
74 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LV POWER MOS
- BSC026NE2LS5ATMA1
- Infineon Technologies
-
1:
$1.71
-
4,628En existencias
|
N.º de artículo de Mouser
726-BSC026NE2LS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LV POWER MOS
|
|
4,628En existencias
|
|
|
$1.71
|
|
|
$1.01
|
|
|
$0.685
|
|
|
$0.55
|
|
|
Ver
|
|
|
$0.439
|
|
|
$0.476
|
|
|
$0.457
|
|
|
$0.439
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
82 A
|
4 mOhms
|
- 16 V, 16 V
|
1.2 V
|
12 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A TDSON-8
- BSC037N08NS5ATMA1
- Infineon Technologies
-
1:
$3.06
-
13,036En existencias
|
N.º de artículo de Mouser
726-BSC037N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A TDSON-8
|
|
13,036En existencias
|
|
|
$3.06
|
|
|
$1.89
|
|
|
$1.37
|
|
|
$1.10
|
|
|
Ver
|
|
|
$0.946
|
|
|
$1.02
|
|
|
$0.994
|
|
|
$0.946
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
100 A
|
3.7 mOhms
|
- 20 V, 20 V
|
3.8 V
|
46 nC
|
- 55 C
|
+ 150 C
|
114 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A TDSON-8
- BSC040N08NS5ATMA1
- Infineon Technologies
-
1:
$2.93
-
1,824En existencias
-
5,000Se espera el 26/05/2026
|
N.º de artículo de Mouser
726-BSC040N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A TDSON-8
|
|
1,824En existencias
5,000Se espera el 26/05/2026
|
|
|
$2.93
|
|
|
$1.89
|
|
|
$1.29
|
|
|
$1.05
|
|
|
Ver
|
|
|
$0.924
|
|
|
$0.99
|
|
|
$0.971
|
|
|
$0.924
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
100 A
|
4 mOhms
|
- 20 V, 20 V
|
2.2 V
|
43 nC
|
- 55 C
|
+ 150 C
|
104 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A
- BSC030N08NS5ATMA1
- Infineon Technologies
-
1:
$3.10
-
34,815En pedido
|
N.º de artículo de Mouser
726-BSC030N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A
|
|
34,815En pedido
En pedido:
24,815 Se espera el 23/07/2026
Plazo de entrega de fábrica:
13 Semanas
|
|
|
$3.10
|
|
|
$1.96
|
|
|
$1.35
|
|
|
$1.13
|
|
|
$1.09
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
100 A
|
4.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
61 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
- BSZ110N08NS5ATMA1
- Infineon Technologies
-
1:
$1.94
-
19,830En pedido
|
N.º de artículo de Mouser
726-BSZ110N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
|
|
19,830En pedido
En pedido:
4,830 Se espera el 20/08/2026
15,000 Se espera el 25/03/2027
Plazo de entrega de fábrica:
53 Semanas
|
|
|
$1.94
|
|
|
$1.16
|
|
|
$0.803
|
|
|
$0.609
|
|
|
$0.512
|
|
|
$0.463
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
40 A
|
11 mOhms
|
- 20 V, 20 V
|
2.2 V
|
15 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|