|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- IPA90R340C3XKSA2
- Infineon Technologies
-
1:
$6.91
-
594En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPA90R340C3XKSA2
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
594En existencias
|
|
|
$6.91
|
|
|
$4.29
|
|
|
$3.33
|
|
|
$2.52
|
|
|
Ver
|
|
|
$2.49
|
|
|
$2.37
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
15 A
|
340 mOhms
|
- 20 V, 20 V
|
3.5 V
|
94 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 1.9A DPAK-2
- IPD80R2K8CEATMA1
- Infineon Technologies
-
1:
$1.91
-
8,652En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD80R2K8CEATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 1.9A DPAK-2
|
|
8,652En existencias
|
|
|
$1.91
|
|
|
$1.19
|
|
|
$0.783
|
|
|
$0.616
|
|
|
$0.384
|
|
|
Ver
|
|
|
$0.526
|
|
|
$0.376
|
|
|
$0.359
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
1.9 A
|
2.8 Ohms
|
- 30 V, 30 V
|
3 V
|
12 nC
|
- 55 C
|
+ 150 C
|
42 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- SPD06N80C3ATMA1
- Infineon Technologies
-
1:
$2.60
-
3,646En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPD06N80C3ATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
3,646En existencias
|
|
|
$2.60
|
|
|
$1.67
|
|
|
$1.14
|
|
|
$0.961
|
|
|
$0.805
|
|
|
Ver
|
|
|
$0.851
|
|
|
$0.774
|
|
|
$0.773
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
900 mOhms
|
- 20 V, 20 V
|
2.1 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPA60R125P6XKSA1
- Infineon Technologies
-
1:
$4.74
-
822En existencias
|
N.º de artículo de Mouser
726-IPA60R125P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
822En existencias
|
|
|
$4.74
|
|
|
$2.96
|
|
|
$2.32
|
|
|
$1.69
|
|
|
Ver
|
|
|
$1.68
|
|
|
$1.57
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
- 20 V, 20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPAN70R360P7SXKSA1
- Infineon Technologies
-
1:
$2.04
-
1,669En existencias
|
N.º de artículo de Mouser
726-IPAN70R360P7SXKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,669En existencias
|
|
|
$2.04
|
|
|
$1.13
|
|
|
$0.841
|
|
|
$0.666
|
|
|
Ver
|
|
|
$0.522
|
|
|
$0.52
|
|
|
$0.468
|
|
|
$0.463
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
700 V
|
12.5 A
|
300 mOhms
|
- 30 V, 30 V
|
2.5 V
|
16.4 nC
|
- 40 C
|
+ 150 C
|
26.5 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 850V 54.9A TO247-3
- SPW55N80C3
- Infineon Technologies
-
1:
$16.61
-
451En existencias
|
N.º de artículo de Mouser
726-SPW55N80C3
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 850V 54.9A TO247-3
|
|
451En existencias
|
|
|
$16.61
|
|
|
$12.65
|
|
|
$10.54
|
|
|
$9.39
|
|
|
$8.83
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
54.9 A
|
77 mOhms
|
- 20 V, 20 V
|
2.1 V
|
288 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 850V 54.9A TO247-3
- SPW55N80C3FKSA1
- Infineon Technologies
-
1:
$17.46
-
284En existencias
|
N.º de artículo de Mouser
726-SPW55N80C3FKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 850V 54.9A TO247-3
|
|
284En existencias
|
|
|
$17.46
|
|
|
$11.76
|
|
|
$10.09
|
|
|
$8.94
|
|
|
$8.51
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
54.9 A
|
77 mOhms
|
- 20 V, 20 V
|
2.1 V
|
288 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- IPB90R340C3ATMA2
- Infineon Technologies
-
1:
$7.02
-
1,194En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPB90R340C3ATMA2
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
1,194En existencias
|
|
|
$7.02
|
|
|
$4.57
|
|
|
$3.50
|
|
|
$3.03
|
|
|
$2.94
|
|
|
Ver
|
|
|
$2.63
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
900 V
|
15 A
|
340 mOhms
|
- 20 V, 20 V
|
3.5 V
|
94 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
- IPW90R120C3XKSA1
- Infineon Technologies
-
1:
$18.37
-
197En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPW90R120C3XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
|
|
197En existencias
|
|
|
$18.37
|
|
|
$13.99
|
|
|
$11.66
|
|
|
$10.38
|
|
|
$9.83
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
900 V
|
36 A
|
120 mOhms
|
- 20 V, 20 V
|
3.5 V
|
270 nC
|
- 55 C
|
+ 150 C
|
417 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- SPA11N80C3XKSA2
- Infineon Technologies
-
1:
$3.56
-
304En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPA11N80C3XKSA2
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
304En existencias
|
|
|
$3.56
|
|
|
$2.11
|
|
|
$1.62
|
|
|
$1.35
|
|
|
Ver
|
|
|
$1.25
|
|
|
$1.16
|
|
|
$1.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
1 A
|
450 mOhms
|
- 20 V, 20 V
|
3 V
|
85 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO220-3
- SPP20N60C3XKSA1
- Infineon Technologies
-
1:
$4.88
-
1,456En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPP20N60C3XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO220-3
|
|
1,456En existencias
|
|
|
$4.88
|
|
|
$3.20
|
|
|
$2.38
|
|
|
$2.00
|
|
|
Ver
|
|
|
$1.85
|
|
|
$1.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20.7 A
|
190 mOhms
|
- 20 V, 20 V
|
2.1 V
|
87 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO247-3 CoolMOS C3
- SPW20N60C3
- Infineon Technologies
-
1:
$5.90
-
1,135En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPW20N60C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO247-3 CoolMOS C3
|
|
1,135En existencias
|
|
|
$5.90
|
|
|
$3.86
|
|
|
$2.84
|
|
|
$2.53
|
|
|
$2.24
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
20.7 A
|
190 mOhms
|
- 20 V, 20 V
|
2.1 V
|
87 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPA60R099P6XKSA1
- Infineon Technologies
-
1:
$6.05
-
854En existencias
|
N.º de artículo de Mouser
726-IPA60R099P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
854En existencias
|
|
|
$6.05
|
|
|
$3.54
|
|
|
$2.92
|
|
|
$2.74
|
|
|
Ver
|
|
|
$2.20
|
|
|
$2.15
|
|
|
$2.08
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
- 20 V, 20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA70R360P7SXKSA1
- Infineon Technologies
-
1:
$1.85
-
2,869En existencias
|
N.º de artículo de Mouser
726-IPA70R360P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,869En existencias
|
|
|
$1.85
|
|
|
$1.11
|
|
|
$0.771
|
|
|
$0.662
|
|
|
Ver
|
|
|
$0.649
|
|
|
$0.636
|
|
|
$0.552
|
|
|
$0.494
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
700 V
|
12.5 A
|
300 mOhms
|
- 16 V, 16 V
|
2.5 V
|
16.4 nC
|
- 40 C
|
+ 150 C
|
26.5 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R280P7SAUMA1
- Infineon Technologies
-
1:
$1.94
-
3,200En existencias
|
N.º de artículo de Mouser
726-IPD60R280P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
3,200En existencias
|
|
|
$1.94
|
|
|
$1.22
|
|
|
$0.798
|
|
|
$0.633
|
|
|
$0.563
|
|
|
$0.482
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 40 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R600P7SAUMA1
- Infineon Technologies
-
1:
$1.31
-
12,751En existencias
|
N.º de artículo de Mouser
726-IPD60R600P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
12,751En existencias
|
|
|
$1.31
|
|
|
$0.776
|
|
|
$0.547
|
|
|
$0.429
|
|
|
$0.32
|
|
|
Ver
|
|
|
$0.383
|
|
|
$0.284
|
|
|
$0.266
|
|
|
$0.261
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
600 mOhms
|
- 20 V, 20 V
|
3.5 V
|
9 nC
|
- 40 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN60R600P7SATMA1
- Infineon Technologies
-
1:
$1.31
-
2,870En existencias
|
N.º de artículo de Mouser
726-IPN60R600P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,870En existencias
|
|
|
$1.31
|
|
|
$0.815
|
|
|
$0.535
|
|
|
$0.418
|
|
|
$0.332
|
|
|
Ver
|
|
|
$0.373
|
|
|
$0.288
|
|
|
$0.269
|
|
|
$0.255
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
490 mOhms
|
- 20 V, 20 V
|
3 V
|
9 nC
|
- 40 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN70R600P7SATMA1
- Infineon Technologies
-
1:
$1.40
-
4,823En existencias
|
N.º de artículo de Mouser
726-IPN70R600P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
4,823En existencias
|
|
|
$1.40
|
|
|
$0.828
|
|
|
$0.573
|
|
|
$0.455
|
|
|
$0.355
|
|
|
Ver
|
|
|
$0.406
|
|
|
$0.311
|
|
|
$0.29
|
|
|
$0.275
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
700 V
|
8.5 A
|
490 mOhms
|
- 16 V, 16 V
|
2.5 V
|
10.5 nC
|
- 40 C
|
+ 150 C
|
6.9 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R500CEXKSA2
- Infineon Technologies
-
1:
$1.79
-
922En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPA50R500CEXKSA2
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
922En existencias
|
|
|
$1.79
|
|
|
$0.844
|
|
|
$0.752
|
|
|
$0.589
|
|
|
Ver
|
|
|
$0.519
|
|
|
$0.484
|
|
|
$0.43
|
|
|
$0.415
|
|
|
$0.365
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
11.1 A
|
1.17 Ohms
|
- 20 V, 20 V
|
3 V
|
18.7 nC
|
- 40 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.7A TO220FP-3
- IPA60R280P6XKSA1
- Infineon Technologies
-
1:
$3.03
-
736En existencias
|
N.º de artículo de Mouser
726-IPA60R280P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.7A TO220FP-3
|
|
736En existencias
|
|
|
$3.03
|
|
|
$1.62
|
|
|
$1.34
|
|
|
$1.09
|
|
|
Ver
|
|
|
$0.899
|
|
|
$0.877
|
|
|
$0.793
|
|
|
$0.766
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13.8 A
|
252 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25.5 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R280CEAUMA1
- Infineon Technologies
-
1:
$2.31
-
478En existencias
-
12,500En pedido
|
N.º de artículo de Mouser
726-IPD50R280CEAUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
478En existencias
12,500En pedido
Existencias:
478 Se puede enviar inmediatamente
En pedido:
5,000 Se espera el 17/07/2026
7,500 Se espera el 17/08/2026
Plazo de entrega de fábrica:
10 Semanas
|
|
|
$2.31
|
|
|
$1.45
|
|
|
$0.953
|
|
|
$0.756
|
|
|
$0.672
|
|
|
$0.576
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
18.1 A
|
280 mOhms
|
- 20 V, 20 V
|
3 V
|
32.6 nC
|
- 55 C
|
+ 150 C
|
119 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.3A TO220FP-3
- IPA60R400CEXKSA1
- Infineon Technologies
-
1:
$2.13
-
63En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPA60R400CEXKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.3A TO220FP-3
|
|
63En existencias
|
|
|
$2.13
|
|
|
$1.33
|
|
|
$0.882
|
|
|
$0.699
|
|
|
Ver
|
|
|
$0.621
|
|
|
$0.568
|
|
|
$0.546
|
|
|
$0.53
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
600 V
|
14.7 A
|
890 mOhms
|
- 20 V, 20 V
|
3 V
|
32 nC
|
- 40 C
|
+ 150 C
|
31 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 11A D2PAK-2 CoolMOS C3
- SPB11N60C3
- Infineon Technologies
-
1:
$4.85
-
37En existencias
-
1,000Se espera el 7/08/2026
-
NRND
|
N.º de artículo de Mouser
726-SPB11N60C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 11A D2PAK-2 CoolMOS C3
|
|
37En existencias
1,000Se espera el 7/08/2026
|
|
|
$4.85
|
|
|
$3.18
|
|
|
$2.37
|
|
|
$1.99
|
|
|
$1.74
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
380 mOhms
|
- 20 V, 20 V
|
2.1 V
|
45 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.4A TO220FP-3
- IPA60R160P6XKSA1
- Infineon Technologies
-
1:
$3.89
-
8En existencias
-
1,000Se espera el 24/09/2026
|
N.º de artículo de Mouser
726-IPA60R160P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.4A TO220FP-3
|
|
8En existencias
1,000Se espera el 24/09/2026
|
|
|
$3.89
|
|
|
$2.54
|
|
|
$1.85
|
|
|
$1.54
|
|
|
Ver
|
|
|
$1.43
|
|
|
$1.35
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA60R180P7SXKSA1
- Infineon Technologies
-
1:
$2.68
-
770En existencias
|
N.º de artículo de Mouser
726-IPA60R180P7SXKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
770En existencias
|
|
|
$2.68
|
|
|
$1.39
|
|
|
$1.07
|
|
|
$0.854
|
|
|
Ver
|
|
|
$0.766
|
|
|
$0.761
|
|
|
$0.754
|
|
|
$0.71
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
145 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 40 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|