|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ021N04LS6ATMA1
- Infineon Technologies
-
1:
$1.37
-
8,918En existencias
|
N.º de artículo de Mouser
726-BSZ021N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
8,918En existencias
|
|
|
$1.37
|
|
|
$1.11
|
|
|
$0.963
|
|
|
$0.864
|
|
|
Ver
|
|
|
$0.691
|
|
|
$0.774
|
|
|
$0.724
|
|
|
$0.691
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
2.4 mOhms
|
- 20 V, 20 V
|
2.3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
83 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 6 low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance
- IQE020N04LM6CGATMA1
- Infineon Technologies
-
1:
$2.62
-
3,500En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IQE020N04LM6CGAT
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 6 low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance
|
|
3,500En existencias
|
|
|
$2.62
|
|
|
$1.68
|
|
|
$1.15
|
|
|
$0.97
|
|
|
$0.718
|
|
|
Ver
|
|
|
$0.859
|
|
|
$0.846
|
|
|
$0.708
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TTFN-9
|
N-Channel
|
1 Channel
|
40 V
|
166 A
|
2.05 mOhms
|
20 V
|
2.3 V
|
25 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSC010N04LS6ATMA1
- Infineon Technologies
-
1:
$2.73
-
12,971En existencias
|
N.º de artículo de Mouser
726-BSC010N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
12,971En existencias
|
|
|
$2.73
|
|
|
$1.69
|
|
|
$1.21
|
|
|
$0.968
|
|
|
$0.90
|
|
|
$0.845
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1 mOhms
|
- 20 V, 20 V
|
1.3 V
|
67 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSC059N04LS6ATMA1
- Infineon Technologies
-
1:
$1.47
-
5,806En existencias
-
70,000En pedido
|
N.º de artículo de Mouser
726-BSC059N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
5,806En existencias
70,000En pedido
Existencias:
5,806 Se puede enviar inmediatamente
En pedido:
40,000 Se espera el 18/06/2026
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$1.47
|
|
|
$0.926
|
|
|
$0.614
|
|
|
$0.48
|
|
|
$0.36
|
|
|
Ver
|
|
|
$0.40
|
|
|
$0.357
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
59 A
|
5.9 mOhms
|
- 20 V, 20 V
|
1.3 V
|
9.4 nC
|
- 55 C
|
+ 175 C
|
38 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ018N04LS6ATMA1
- Infineon Technologies
-
1:
$1.52
-
11,064En existencias
-
20,000Se espera el 18/02/2027
|
N.º de artículo de Mouser
726-BSZ018N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
11,064En existencias
20,000Se espera el 18/02/2027
|
|
|
$1.52
|
|
|
$1.24
|
|
|
$1.08
|
|
|
$0.993
|
|
|
Ver
|
|
|
$0.818
|
|
|
$0.88
|
|
|
$0.833
|
|
|
$0.818
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
2.1 mOhms
|
- 20 V, 20 V
|
2.3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
83 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSC007N04LS6ATMA1
- Infineon Technologies
-
1:
$4.50
-
55En existencias
-
40,000En pedido
|
N.º de artículo de Mouser
726-BSC007N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
55En existencias
40,000En pedido
Existencias:
55 Se puede enviar inmediatamente
En pedido:
15,000 Se espera el 24/12/2026
25,000 Se espera el 28/01/2027
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$4.50
|
|
|
$2.81
|
|
|
$2.12
|
|
|
$1.81
|
|
|
$1.74
|
|
|
$1.69
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
381 A
|
700 uOhms
|
- 20 V, 20 V
|
1.3 V
|
94 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSC022N04LS6ATMA1
- Infineon Technologies
-
1:
$2.10
-
133,692En pedido
|
N.º de artículo de Mouser
726-BSC022N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
133,692En pedido
En pedido:
33,692 Se espera el 18/06/2026
100,000 Se espera el 2/07/2026
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$2.10
|
|
|
$1.34
|
|
|
$0.904
|
|
|
$0.754
|
|
|
Ver
|
|
|
$0.588
|
|
|
$0.679
|
|
|
$0.635
|
|
|
$0.588
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
2.2 mOhms
|
- 20 V, 20 V
|
1.3 V
|
28 nC
|
- 55 C
|
+ 175 C
|
79 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ063N04LS6ATMA1
- Infineon Technologies
-
1:
$1.35
-
179,766En pedido
|
N.º de artículo de Mouser
726-BSZ063N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
179,766En pedido
En pedido:
39,766 Se espera el 3/12/2026
50,000 Se espera el 15/04/2027
90,000 Se espera el 10/06/2027
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$1.35
|
|
|
$0.874
|
|
|
$0.651
|
|
|
$0.558
|
|
|
$0.48
|
|
|
$0.437
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
7 mOhms
|
- 20 V, 20 V
|
2.3 V
|
9.5 nC
|
- 55 C
|
+ 175 C
|
38 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ024N04LS6ATMA1
- Infineon Technologies
-
1:
$1.65
-
13,336Se espera el 11/02/2027
|
N.º de artículo de Mouser
726-BSZ024N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
13,336Se espera el 11/02/2027
|
|
|
$1.65
|
|
|
$1.17
|
|
|
$0.918
|
|
|
$0.765
|
|
|
$0.735
|
|
|
$0.67
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
2.8 mOhms
|
- 20 V, 20 V
|
2.3 V
|
25 nC
|
- 55 C
|
+ 175 C
|
75 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 6 low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down dual-side cooled package with best-price performance
- IQE020N04LM6CGSCATMA1
- Infineon Technologies
-
1:
$2.81
-
4,200En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IQE020N04LM6CGSC
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 6 low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down dual-side cooled package with best-price performance
|
|
4,200En existencias
|
|
|
$2.81
|
|
|
$1.81
|
|
|
$1.24
|
|
|
$1.01
|
|
|
Ver
|
|
|
$0.815
|
|
|
$0.936
|
|
|
$0.904
|
|
|
$0.815
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
SMD/SMT
|
WTFN-9
|
N-Channel
|
1 Channel
|
40 V
|
166 A
|
2.05 mOhms
|
20 V
|
2.3 V
|
25 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape
|
|