|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IPG20N10S4L-22A
- Infineon Technologies
-
1:
$2.60
-
4,816En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L-22A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
4,816En existencias
|
|
|
$2.60
|
|
|
$1.67
|
|
|
$1.14
|
|
|
$0.96
|
|
|
Ver
|
|
|
$0.773
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|
|
$0.851
|
|
|
$0.805
|
|
|
$0.773
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q101
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IPG20N10S4L22AATMA1
- Infineon Technologies
-
1:
$2.85
-
664En existencias
|
N.º de artículo de Mouser
726-20N10S4L22AATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
664En existencias
|
|
|
$2.85
|
|
|
$1.82
|
|
|
$1.24
|
|
|
$1.05
|
|
|
Ver
|
|
|
$0.84
|
|
|
$0.935
|
|
|
$0.884
|
|
|
$0.84
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q101
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N10S4L22ATMA1
- Infineon Technologies
-
1:
$2.53
-
7,374En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L22ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
7,374En existencias
|
|
|
$2.53
|
|
|
$1.58
|
|
|
$1.12
|
|
|
$0.947
|
|
|
Ver
|
|
|
$0.776
|
|
|
$0.845
|
|
|
$0.84
|
|
|
$0.776
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q100
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N10S4L-22
- Infineon Technologies
-
1:
$2.61
-
187En existencias
-
10,000En pedido
|
N.º de artículo de Mouser
726-IPG20N10S4L-22
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
187En existencias
10,000En pedido
|
|
|
$2.61
|
|
|
$1.67
|
|
|
$1.14
|
|
|
$0.964
|
|
|
Ver
|
|
|
$0.776
|
|
|
$0.854
|
|
|
$0.808
|
|
|
$0.776
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q100
|
Reel, Cut Tape, MouseReel
|
|
