|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 8 power MOSFET 100 V l in SuperSO8 package
- ISC019N10NM8ATMA1
- Infineon Technologies
-
1:
$5.45
-
143En existencias
-
5,000Se espera el 20/08/2026
-
Nuevo producto
|
N.º de artículo de Mouser
726-ISC019N10NM8ATMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 8 power MOSFET 100 V l in SuperSO8 package
|
|
143En existencias
5,000Se espera el 20/08/2026
|
|
|
$5.45
|
|
|
$3.57
|
|
|
$2.66
|
|
|
$2.23
|
|
|
$2.07
|
|
|
$1.75
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
245 A
|
1.93 mOhms
|
- 20 V, 20 V
|
3.2 V
|
106 nC
|
- 55 C
|
+ 175 C
|
268 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 8 power MOSFET 100 V in SuperSO8 package
- ISC033N10NM8ATMA1
- Infineon Technologies
-
1:
$3.11
-
150En existencias
-
5,000Se espera el 10/06/2027
-
Nuevo producto
|
N.º de artículo de Mouser
726-ISC033N10NM8ATMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 8 power MOSFET 100 V in SuperSO8 package
|
|
150En existencias
5,000Se espera el 10/06/2027
|
|
|
$3.11
|
|
|
$2.02
|
|
|
$1.40
|
|
|
$1.17
|
|
|
Ver
|
|
|
$0.937
|
|
|
$1.08
|
|
|
$1.01
|
|
|
$0.937
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
150 A
|
3.33 mOhms
|
- 20 V, 20 V
|
3.2 V
|
59 nC
|
- 55 C
|
+ 175 C
|
179 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- ISC16DP15LMATMA1
- Infineon Technologies
-
1:
$3.72
-
2,870En existencias
|
N.º de artículo de Mouser
726-ISC16DP15LMATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
2,870En existencias
|
|
|
$3.72
|
|
|
$2.32
|
|
|
$1.47
|
|
|
$1.27
|
|
|
$1.15
|
|
|
$1.11
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
P-Channel
|
1 Channel
|
150 V
|
22 A
|
160 mOhms
|
- 20 V, 20 V
|
2 V
|
46 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- BSC050N10NS5ATMA1
- Infineon Technologies
-
1:
$2.85
-
15,174En existencias
|
N.º de artículo de Mouser
726-BSC050N10NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
15,174En existencias
|
|
|
$2.85
|
|
|
$1.62
|
|
|
$1.20
|
|
|
$1.02
|
|
|
$0.818
|
|
|
Ver
|
|
|
$0.941
|
|
|
$0.908
|
|
|
$0.797
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
100 A
|
5 mOhms
|
- 20 V, 20 V
|
3.8 V
|
61 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPC100N04S51R2ATMA1
- Infineon Technologies
-
1:
$2.64
-
19,895En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPC100N04S51R2AT
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
19,895En existencias
|
|
|
$2.64
|
|
|
$1.51
|
|
|
$1.16
|
|
|
$1.04
|
|
|
Ver
|
|
|
$0.78
|
|
|
$0.945
|
|
|
$0.894
|
|
|
$0.78
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1.2 mOhms
|
- 20 V, 20 V
|
2.8 V
|
131 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 81A TDSON-8 OptiMOS 3
- BSC054N04NS G
- Infineon Technologies
-
1:
$1.51
-
121,213En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC054N04NSG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 81A TDSON-8 OptiMOS 3
|
|
121,213En existencias
|
|
|
$1.51
|
|
|
$0.928
|
|
|
$0.611
|
|
|
$0.48
|
|
|
$0.321
|
|
|
Ver
|
|
|
$0.411
|
|
|
$0.379
|
|
|
$0.318
|
|
|
$0.31
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
81 A
|
5.4 mOhms
|
- 20 V, 20 V
|
2 V
|
26 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 33A TDSON-8 OptiMOS 3
- BSC360N15NS3 G
- Infineon Technologies
-
1:
$2.85
-
4,900En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
726-BSC360N15NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 33A TDSON-8 OptiMOS 3
|
|
4,900En existencias
5,000En pedido
|
|
|
$2.85
|
|
|
$1.83
|
|
|
$1.24
|
|
|
$1.05
|
|
|
Ver
|
|
|
$0.842
|
|
|
$0.937
|
|
|
$0.886
|
|
|
$0.842
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
150 V
|
33 A
|
36 mOhms
|
- 20 V, 20 V
|
3 V
|
12 nC
|
- 55 C
|
+ 150 C
|
74 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 63A TDSON-8 OptiMOS
- BSC0906NS
- Infineon Technologies
-
1:
$1.00
-
9,659En existencias
|
N.º de artículo de Mouser
726-BSC0906NS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 63A TDSON-8 OptiMOS
|
|
9,659En existencias
|
|
|
$1.00
|
|
|
$0.662
|
|
|
$0.439
|
|
|
$0.33
|
|
|
$0.215
|
|
|
Ver
|
|
|
$0.278
|
|
|
$0.249
|
|
|
$0.198
|
|
|
$0.171
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
63 A
|
4.5 mOhms
|
- 20 V, 20 V
|
1.2 V
|
13 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- BSC155N06NDATMA1
- Infineon Technologies
-
1:
$2.09
-
4,017En existencias
|
N.º de artículo de Mouser
726-BSC155N06NDATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
4,017En existencias
|
|
|
$2.09
|
|
|
$1.25
|
|
|
$0.894
|
|
|
$0.724
|
|
|
Ver
|
|
|
$0.583
|
|
|
$0.649
|
|
|
$0.607
|
|
|
$0.583
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
60 V
|
20 A
|
15.5 mOhms
|
- 20 V, 20 V
|
2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
50 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS 3M
- BSC030N03MS G
- Infineon Technologies
-
1:
$1.71
-
5,000En existencias
|
N.º de artículo de Mouser
726-BSC030N03MSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS 3M
|
|
5,000En existencias
|
|
|
$1.71
|
|
|
$1.06
|
|
|
$0.694
|
|
|
$0.546
|
|
|
$0.374
|
|
|
Ver
|
|
|
$0.467
|
|
|
$0.423
|
|
|
$0.362
|
|
|
$0.355
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
2.5 mOhms
|
- 20 V, 20 V
|
1 V
|
73 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IAUC120N04S6L012ATMA1
- Infineon Technologies
-
1:
$2.50
-
3,613En existencias
|
N.º de artículo de Mouser
726-IAUC120N04S6L012
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
3,613En existencias
|
|
|
$2.50
|
|
|
$1.48
|
|
|
$1.05
|
|
|
$0.869
|
|
|
Ver
|
|
|
$0.70
|
|
|
$0.779
|
|
|
$0.728
|
|
|
$0.70
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.29 mOhms
|
- 16 V, 16 V
|
1.6 V
|
60 nC
|
- 55 C
|
+ 175 C
|
115 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 95A TDSON-8
- BSC052N08NS5ATMA1
- Infineon Technologies
-
1:
$2.96
-
14,465En existencias
|
N.º de artículo de Mouser
726-BSC052N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 95A TDSON-8
|
|
14,465En existencias
|
|
|
$2.96
|
|
|
$1.82
|
|
|
$1.33
|
|
|
$1.08
|
|
|
Ver
|
|
|
$0.946
|
|
|
$1.00
|
|
|
$0.965
|
|
|
$0.946
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
95 A
|
7.6 mOhms
|
- 20 V, 20 V
|
2.2 V
|
32 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS 3M
- BSC030N03MSGATMA1
- Infineon Technologies
-
1:
$1.63
-
9,641En existencias
|
N.º de artículo de Mouser
726-BSC030N03MSGATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS 3M
|
|
9,641En existencias
|
|
|
$1.63
|
|
|
$0.921
|
|
|
$0.641
|
|
|
$0.524
|
|
|
$0.374
|
|
|
Ver
|
|
|
$0.441
|
|
|
$0.423
|
|
|
$0.372
|
|
|
$0.355
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
2.5 mOhms
|
- 20 V, 20 V
|
1 V
|
73 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IPG20N10S4L-22A
- Infineon Technologies
-
1:
$2.60
-
4,816En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L-22A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
4,816En existencias
|
|
|
$2.60
|
|
|
$1.67
|
|
|
$1.14
|
|
|
$0.96
|
|
|
Ver
|
|
|
$0.773
|
|
|
$0.851
|
|
|
$0.805
|
|
|
$0.773
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 100A TDSON-8 OptiMOS
- BSC009NE2LS
- Infineon Technologies
-
1:
$2.26
-
4,929En existencias
|
N.º de artículo de Mouser
726-BSC009NE2LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 100A TDSON-8 OptiMOS
|
|
4,929En existencias
|
|
|
$2.26
|
|
|
$1.44
|
|
|
$0.665
|
|
|
$0.622
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
100 A
|
1 mOhms
|
- 20 V, 20 V
|
1 V
|
168 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -30V -78.6A TDSON-8 OptiMOS P3
- BSC084P03NS3 G
- Infineon Technologies
-
1:
$1.98
-
9,130En existencias
|
N.º de artículo de Mouser
726-BSC084P03NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -30V -78.6A TDSON-8 OptiMOS P3
|
|
9,130En existencias
|
|
|
$1.98
|
|
|
$1.22
|
|
|
$0.804
|
|
|
$0.632
|
|
|
$0.434
|
|
|
Ver
|
|
|
$0.54
|
|
|
$0.49
|
|
|
$0.419
|
|
|
$0.411
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
P-Channel
|
1 Channel
|
30 V
|
78.6 A
|
6.1 mOhms
|
- 25 V, 25 V
|
3.1 V
|
57.7 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 84A TDSON-8 OptiMOS
- BSC032NE2LSATMA1
- Infineon Technologies
-
1:
$1.39
-
9,134En existencias
|
N.º de artículo de Mouser
726-BSC032NE2LSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 84A TDSON-8 OptiMOS
|
|
9,134En existencias
|
|
|
$1.39
|
|
|
$0.708
|
|
|
$0.499
|
|
|
$0.411
|
|
|
Ver
|
|
|
$0.311
|
|
|
$0.36
|
|
|
$0.321
|
|
|
$0.311
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
84 A
|
2.7 mOhms
|
- 20 V, 20 V
|
1.2 V
|
21 nC
|
- 55 C
|
+ 150 C
|
37 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 100A TDSON-8
- BSC036NE7NS3 G
- Infineon Technologies
-
1:
$3.17
-
9,736En existencias
|
N.º de artículo de Mouser
726-BSC036NE7NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 100A TDSON-8
|
|
9,736En existencias
|
|
|
$3.17
|
|
|
$2.06
|
|
|
$1.42
|
|
|
$1.19
|
|
|
Ver
|
|
|
$1.04
|
|
|
$1.10
|
|
|
$1.04
|
|
|
$1.04
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
75 V
|
159 A
|
3.6 mOhms
|
- 20 V, 20 V
|
2.3 V
|
63.4 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 100A TDSON-8 OptiMOS 3
- BSC042NE7NS3 G
- Infineon Technologies
-
1:
$3.47
-
3,510En existencias
|
N.º de artículo de Mouser
726-BSC042NE7NS3GXT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 100A TDSON-8 OptiMOS 3
|
|
3,510En existencias
|
|
|
$3.47
|
|
|
$2.25
|
|
|
$1.56
|
|
|
$1.30
|
|
|
Ver
|
|
|
$1.13
|
|
|
$1.21
|
|
|
$1.13
|
|
|
$1.13
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
75 V
|
100 A
|
3.7 mOhms
|
- 20 V, 20 V
|
2.3 V
|
69 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSC0500NSIATMA1
- Infineon Technologies
-
1:
$2.31
-
4,697En existencias
|
N.º de artículo de Mouser
726-BSC0500NSIATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
4,697En existencias
|
|
|
$2.31
|
|
|
$1.43
|
|
|
$0.965
|
|
|
$0.782
|
|
|
Ver
|
|
|
$0.63
|
|
|
$0.701
|
|
|
$0.656
|
|
|
$0.63
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
1.3 mOhms
|
- 20 V, 20 V
|
2 V
|
52 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSC0501NSIATMA1
- Infineon Technologies
-
1:
$2.00
-
20,566En existencias
|
N.º de artículo de Mouser
726-BSC0501NSIATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
20,566En existencias
|
|
|
$2.00
|
|
|
$1.17
|
|
|
$0.811
|
|
|
$0.661
|
|
|
$0.502
|
|
|
Ver
|
|
|
$0.588
|
|
|
$0.537
|
|
|
$0.464
|
|
|
$0.451
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
130 A
|
1.9 mOhms
|
- 20 V, 20 V
|
2 V
|
33 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPC50N04S5L5R5ATMA1
- Infineon Technologies
-
1:
$1.46
-
15,435En existencias
|
N.º de artículo de Mouser
726-IPC50N04S5L5R5AT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
15,435En existencias
|
|
|
$1.46
|
|
|
$0.764
|
|
|
$0.559
|
|
|
$0.479
|
|
|
$0.337
|
|
|
Ver
|
|
|
$0.421
|
|
|
$0.381
|
|
|
$0.326
|
|
|
$0.32
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
50 A
|
5.5 mOhms
|
- 16 V, 16 V
|
1.6 V
|
23 nC
|
- 55 C
|
+ 175 C
|
42 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSC0502NSIATMA1
- Infineon Technologies
-
1:
$1.74
-
9,928En existencias
|
N.º de artículo de Mouser
726-BSC0502NSIATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
9,928En existencias
|
|
|
$1.74
|
|
|
$1.02
|
|
|
$0.719
|
|
|
$0.57
|
|
|
$0.435
|
|
|
Ver
|
|
|
$0.507
|
|
|
$0.463
|
|
|
$0.434
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2 V
|
26 nC
|
- 55 C
|
+ 150 C
|
43 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
- BSC0902NSI
- Infineon Technologies
-
1:
$1.27
-
7,936En existencias
|
N.º de artículo de Mouser
726-BSC0902NSI
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
|
|
7,936En existencias
|
|
|
$1.27
|
|
|
$0.72
|
|
|
$0.514
|
|
|
$0.427
|
|
|
$0.314
|
|
|
Ver
|
|
|
$0.368
|
|
|
$0.356
|
|
|
$0.308
|
|
|
$0.271
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
2.2 mOhms
|
- 20 V, 20 V
|
2 V
|
16.2 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IAUC120N04S6N010ATMA1
- Infineon Technologies
-
1:
$2.89
-
2,220En existencias
|
N.º de artículo de Mouser
726-IAUC120N04S6N010
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
2,220En existencias
|
|
|
$2.89
|
|
|
$1.88
|
|
|
$1.28
|
|
|
$1.04
|
|
|
Ver
|
|
|
$0.911
|
|
|
$0.963
|
|
|
$0.93
|
|
|
$0.911
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.03 mOhms
|
- 20 V, 20 V
|
2.6 V
|
108 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|