|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) NFET 30V 250MA 1.5OH
- NVTJD4001NT1G
- onsemi
-
1:
$0.49
-
930,508En existencias
|
N.º de artículo de Mouser
863-NVTJD4001NT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) NFET 30V 250MA 1.5OH
|
|
930,508En existencias
|
|
|
$0.49
|
|
|
$0.299
|
|
|
$0.19
|
|
|
$0.143
|
|
|
$0.107
|
|
|
Ver
|
|
|
$0.127
|
|
|
$0.097
|
|
|
$0.085
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-363-6
|
N-Channel
|
2 Channel
|
30 V
|
250 mA
|
1.5 Ohms
|
- 20 V, 20 V
|
800 mV
|
1.3 nC
|
- 55 C
|
+ 150 C
|
272 mW
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 2.5V Drive Nch MOSFET
- RK7002BMT116
- ROHM Semiconductor
-
1:
$0.18
-
219,181En existencias
|
N.º de artículo de Mouser
755-RK7002BMT116
|
ROHM Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 2.5V Drive Nch MOSFET
|
|
219,181En existencias
|
|
|
$0.18
|
|
|
$0.113
|
|
|
$0.07
|
|
|
$0.051
|
|
|
$0.036
|
|
|
Ver
|
|
|
$0.045
|
|
|
$0.032
|
|
|
$0.027
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
60 V
|
250 mA
|
2.4 Ohms
|
- 20 V, 20 V
|
2.3 V
|
|
- 55 C
|
+ 150 C
|
350 mW
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Trans MOSFET N-CH 60V 0.25A
- RSM002N06T2L
- ROHM Semiconductor
-
1:
$0.35
-
255,260En existencias
|
N.º de artículo de Mouser
755-RSM002N06T2L
|
ROHM Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Trans MOSFET N-CH 60V 0.25A
|
|
255,260En existencias
|
|
|
$0.35
|
|
|
$0.191
|
|
|
$0.129
|
|
|
$0.099
|
|
|
Ver
|
|
|
$0.055
|
|
|
$0.081
|
|
|
$0.077
|
|
|
$0.074
|
|
|
$0.055
|
|
Min.: 1
Mult.: 1
:
8,000
|
|
|
Si
|
SMD/SMT
|
SOT-723-3
|
N-Channel
|
1 Channel
|
60 V
|
250 mA
|
2.4 Ohms
|
- 20 V, 20 V
|
2.3 V
|
|
- 55 C
|
+ 150 C
|
150 mW
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) NX3020NAK-Q/SOT23/TO-236AB
- NX3020NAK-QR
- Nexperia
-
1:
$0.12
-
355En existencias
-
6,000Se espera el 2/04/2027
-
Nuevo producto
|
N.º de artículo de Mouser
771-NX3020NAK-QR
Nuevo producto
|
Nexperia
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) NX3020NAK-Q/SOT23/TO-236AB
|
|
355En existencias
6,000Se espera el 2/04/2027
|
|
|
$0.12
|
|
|
$0.061
|
|
|
$0.051
|
|
|
$0.05
|
|
|
$0.04
|
|
|
$0.039
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
30 V
|
250 mA
|
3 Ohms
|
20 V
|
1.5 V
|
210 pC
|
- 55 C
|
+ 175 C
|
390 mW
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-CH Enhancmnt Mode MOSFET
- TP2104N3-G-P003
- Microchip Technology
-
1:
$0.89
-
2,616En existencias
|
N.º de artículo de Mouser
689-TP2104N3-G-P003
|
Microchip Technology
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-CH Enhancmnt Mode MOSFET
|
|
2,616En existencias
|
|
|
$0.89
|
|
|
$0.75
|
|
|
$0.68
|
|
|
$0.68
|
|
|
$0.668
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
Through Hole
|
TO-92-3
|
P-Channel
|
1 Channel
|
40 V
|
250 mA
|
10 Ohms
|
- 20 V, 20 V
|
2 V
|
|
- 55 C
|
+ 150 C
|
740 mW
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 310mW
- BS870-7-F
- Diodes Incorporated
-
1:
$0.28
-
23,416En existencias
|
N.º de artículo de Mouser
621-BS870-F
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 310mW
|
|
23,416En existencias
|
|
|
$0.28
|
|
|
$0.168
|
|
|
$0.105
|
|
|
$0.078
|
|
|
$0.043
|
|
|
Ver
|
|
|
$0.069
|
|
|
$0.039
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
N-Channel
|
1 Channel
|
60 V
|
250 mA
|
5 Ohms
|
- 20 V, 20 V
|
1 V
|
|
- 55 C
|
+ 150 C
|
300 mW
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Trans MOSFET N-CH 60V 0.25A
- UM6K31NTN
- ROHM Semiconductor
-
1:
$0.53
-
16,594En existencias
|
N.º de artículo de Mouser
755-UM6K31NTN
|
ROHM Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Trans MOSFET N-CH 60V 0.25A
|
|
16,594En existencias
|
|
|
$0.53
|
|
|
$0.326
|
|
|
$0.207
|
|
|
$0.156
|
|
|
$0.117
|
|
|
Ver
|
|
|
$0.139
|
|
|
$0.106
|
|
|
$0.091
|
|
|
$0.087
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-363-6
|
N-Channel
|
2 Channel
|
60 V
|
250 mA
|
2.4 Ohms
|
- 20 V, 20 V
|
2.3 V
|
|
- 55 C
|
+ 150 C
|
150 mW
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
- 2N7002KS6-T
- Rectron
-
1:
$0.35
-
19,340En existencias
|
N.º de artículo de Mouser
583-2N7002KS6-T
|
Rectron
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
|
|
19,340En existencias
|
|
|
$0.35
|
|
|
$0.237
|
|
|
$0.15
|
|
|
$0.095
|
|
|
$0.072
|
|
|
Ver
|
|
|
$0.083
|
|
|
$0.061
|
|
|
$0.054
|
|
|
$0.049
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT363-6
|
N-Channel
|
2 Channel
|
60 V
|
250 mA
|
5 Ohms
|
- 20 V, 20 V
|
1 V
|
1.7 nC
|
- 55 C
|
+ 150 C
|
350 mW
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH Enhancmnt Mode MOSFET
- TN0620N3-G-P002
- Microchip Technology
-
1:
$1.73
-
7,970En existencias
|
N.º de artículo de Mouser
689-TN0620N3-G-P002
|
Microchip Technology
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH Enhancmnt Mode MOSFET
|
|
7,970En existencias
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
Through Hole
|
TO-92-3
|
N-Channel
|
1 Channel
|
200 V
|
250 mA
|
8 Ohms
|
- 20 V, 20 V
|
600 mV
|
|
- 55 C
|
+ 150 C
|
1 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 12Ohm
- VP2106N3-G
- Microchip Technology
-
1:
$0.64
-
5,015En existencias
|
N.º de artículo de Mouser
689-VP2106N3-G
|
Microchip Technology
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 12Ohm
|
|
5,015En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-92-3
|
P-Channel
|
1 Channel
|
60 V
|
250 mA
|
15 Ohms
|
- 20 V, 20 V
|
1.5 V
|
|
- 55 C
|
+ 150 C
|
1 W
|
Enhancement
|
|
|
Bulk
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Small-Signal MOSFET
- SSM3J35CTC,L3F
- Toshiba
-
1:
$0.27
-
179,935En existencias
|
N.º de artículo de Mouser
757-SSM3J35CTCL3F
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Small-Signal MOSFET
|
|
179,935En existencias
|
|
|
$0.27
|
|
|
$0.162
|
|
|
$0.102
|
|
|
$0.075
|
|
|
$0.04
|
|
|
Ver
|
|
|
$0.059
|
|
|
$0.051
|
|
|
$0.037
|
|
Min.: 1
Mult.: 1
:
10,000
|
|
|
Si
|
SMD/SMT
|
CST3-3
|
P-Channel
|
1 Channel
|
20 V
|
250 mA
|
20 Ohms
|
- 10 V, 10 V
|
1 V
|
|
- 55 C
|
+ 150 C
|
100 mW
|
Enhancement
|
|
U-MOSVII
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET Zener SuperMESH
- STN1NK80Z
- STMicroelectronics
-
1:
$1.84
-
16,656En existencias
|
N.º de artículo de Mouser
511-STN1NK80Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET Zener SuperMESH
|
|
16,656En existencias
|
|
|
$1.84
|
|
|
$1.16
|
|
|
$0.779
|
|
|
$0.639
|
|
|
Ver
|
|
|
$0.519
|
|
|
$0.581
|
|
|
$0.546
|
|
|
$0.519
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-4
|
N-Channel
|
1 Channel
|
800 V
|
250 mA
|
16 Ohms
|
- 30 V, 30 V
|
3 V
|
7.7 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Pch -30V -250mA SOT-23
- RSC002P03T316
- ROHM Semiconductor
-
1:
$0.25
-
82,407En existencias
|
N.º de artículo de Mouser
755-RSC002P03T316
|
ROHM Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Pch -30V -250mA SOT-23
|
|
82,407En existencias
|
|
|
$0.25
|
|
|
$0.153
|
|
|
$0.096
|
|
|
$0.07
|
|
|
$0.051
|
|
|
Ver
|
|
|
$0.062
|
|
|
$0.045
|
|
|
$0.038
|
|
|
$0.036
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-23-3
|
P-Channel
|
1 Channel
|
30 V
|
250 mA
|
1.4 Ohms
|
- 20 V, 20 V
|
2.5 V
|
|
- 55 C
|
+ 150 C
|
200 mW
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LowON Res MOSFET ID=.25A VDSS=20V
- SSM3K35AMFV,L3F
- Toshiba
-
1:
$0.22
-
105,938En existencias
|
N.º de artículo de Mouser
757-SSM3K35AMFVL3F
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LowON Res MOSFET ID=.25A VDSS=20V
|
|
105,938En existencias
|
|
|
$0.22
|
|
|
$0.132
|
|
|
$0.082
|
|
|
$0.06
|
|
|
$0.031
|
|
|
Ver
|
|
|
$0.047
|
|
|
$0.037
|
|
|
$0.029
|
|
Min.: 1
Mult.: 1
:
8,000
|
|
|
Si
|
SMD/SMT
|
VESM-3
|
N-Channel
|
1 Channel
|
20 V
|
250 mA
|
1.1 Ohms
|
- 10 V, 10 V
|
1 V
|
340 pC
|
- 55 C
|
+ 150 C
|
500 mW
|
Enhancement
|
|
U-MOSIII
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LowON Res MOSFET ID=.25A VDSS=20V
- SSM6N35AFE,LF
- Toshiba
-
1:
$0.36
-
108,453En existencias
|
N.º de artículo de Mouser
757-SSM6N35AFELF
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LowON Res MOSFET ID=.25A VDSS=20V
|
|
108,453En existencias
|
|
|
$0.36
|
|
|
$0.221
|
|
|
$0.139
|
|
|
$0.103
|
|
|
$0.065
|
|
|
Ver
|
|
|
$0.091
|
|
|
$0.082
|
|
|
$0.058
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
SOT-563-6
|
N-Channel
|
2 Channel
|
20 V
|
250 mA
|
750 mOhms
|
- 10 V, 10 V
|
350 mV
|
340 pC
|
- 55 C
|
+ 150 C
|
250 mW
|
Enhancement
|
|
U-MOSIII
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Small-signal MOSFET ID=0.25A VDSS=20V
- SSM6N37FU,LF
- Toshiba
-
1:
$0.35
-
54,279En existencias
|
N.º de artículo de Mouser
757-SSM6N37FULF
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Small-signal MOSFET ID=0.25A VDSS=20V
|
|
54,279En existencias
|
|
|
$0.35
|
|
|
$0.217
|
|
|
$0.136
|
|
|
$0.101
|
|
|
$0.074
|
|
|
Ver
|
|
|
$0.089
|
|
|
$0.067
|
|
|
$0.056
|
|
|
$0.054
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-363-6
|
N-Channel
|
2 Channel
|
20 V
|
250 mA
|
1.65 Ohms
|
- 10 V, 10 V
|
350 mV
|
|
- 55 C
|
+ 150 C
|
300 mW
|
Enhancement
|
|
U-MOSIII
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V 250mA Dual N-Channel
- NTJD4001NT1G
- onsemi
-
1:
$0.46
-
115,916En existencias
-
66,000Se espera el 22/01/2027
|
N.º de artículo de Mouser
863-NTJD4001NT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V 250mA Dual N-Channel
|
|
115,916En existencias
66,000Se espera el 22/01/2027
|
|
|
$0.46
|
|
|
$0.281
|
|
|
$0.178
|
|
|
$0.133
|
|
|
$0.118
|
|
|
$0.092
|
|
Min.: 1
Mult.: 1
Máx.: 3,680
:
3,000
|
|
|
Si
|
SMD/SMT
|
SC-88-6
|
N-Channel
|
2 Channel
|
30 V
|
250 mA
|
1.5 Ohms
|
- 20 V, 20 V
|
800 mV
|
900 pC
|
- 55 C
|
+ 150 C
|
272 mW
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V N-Ch Enh FET Dual .25A .32W 389pF
- DMN2990UFZ-7B
- Diodes Incorporated
-
1:
$0.48
-
8,861En existencias
-
10,000Se espera el 3/06/2026
|
N.º de artículo de Mouser
621-DMN2990UFZ-7B
|
Diodes Incorporated
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V N-Ch Enh FET Dual .25A .32W 389pF
|
|
8,861En existencias
10,000Se espera el 3/06/2026
|
|
|
$0.48
|
|
|
$0.293
|
|
|
$0.186
|
|
|
$0.14
|
|
|
$0.089
|
|
|
Ver
|
|
|
$0.112
|
|
|
$0.098
|
|
|
$0.085
|
|
Min.: 1
Mult.: 1
:
10,000
|
|
|
Si
|
SMD/SMT
|
X2-DFN0606-3
|
N-Channel
|
1 Channel
|
20 V
|
250 mA
|
990 mOhms
|
- 8 V, 8 V
|
1 V
|
1 nC
|
- 55 C
|
+ 150 C
|
320 mW
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 500V 13Ohm
- VN2450N8-G
- Microchip Technology
-
1:
$1.50
-
1,128En existencias
-
2,000Se espera el 26/03/2027
|
N.º de artículo de Mouser
689-VN2450N8-G
|
Microchip Technology
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 500V 13Ohm
|
|
1,128En existencias
2,000Se espera el 26/03/2027
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
SOT-89-3
|
N-Channel
|
1 Channel
|
500 V
|
250 mA
|
13 Ohms
|
- 20 V, 20 V
|
1.5 V
|
|
- 55 C
|
+ 150 C
|
1.6 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V 8Ohm
- VP0104N3-G
- Microchip Technology
-
1:
$1.02
-
1,254En existencias
|
N.º de artículo de Mouser
689-VP0104N3-G
|
Microchip Technology
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V 8Ohm
|
|
1,254En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-92-3
|
P-Channel
|
1 Channel
|
40 V
|
250 mA
|
8 Ohms
|
- 20 V, 20 V
|
1.5 V
|
|
- 55 C
|
+ 150 C
|
1 W
|
Enhancement
|
|
|
Bulk
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 8Ohm
- VP0106N3-G
- Microchip Technology
-
1:
$1.06
-
1,160En existencias
|
N.º de artículo de Mouser
689-VP0106N3-G
|
Microchip Technology
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 8Ohm
|
|
1,160En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-92-3
|
P-Channel
|
1 Channel
|
60 V
|
250 mA
|
8 Ohms
|
- 20 V, 20 V
|
1.5 V
|
|
- 55 C
|
+ 150 C
|
1 W
|
Enhancement
|
|
|
Bulk
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 90V 8Ohm
- VP0109N3-G
- Microchip Technology
-
1:
$1.16
-
1,140En existencias
|
N.º de artículo de Mouser
689-VP0109N3-G
|
Microchip Technology
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 90V 8Ohm
|
|
1,140En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-92-3
|
P-Channel
|
1 Channel
|
90 V
|
250 mA
|
8 Ohms
|
- 20 V, 20 V
|
3.5 V
|
|
- 55 C
|
+ 150 C
|
1 W
|
Enhancement
|
|
|
Bulk
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LowON Res MOSFET ID=-.25A VDSS=-20V
- SSM3J35AFS,LF
- Toshiba
-
1:
$0.23
-
14,329En existencias
|
N.º de artículo de Mouser
757-SSM3J35AFSLF
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LowON Res MOSFET ID=-.25A VDSS=-20V
|
|
14,329En existencias
|
|
|
$0.23
|
|
|
$0.143
|
|
|
$0.089
|
|
|
$0.065
|
|
|
$0.047
|
|
|
Ver
|
|
|
$0.057
|
|
|
$0.042
|
|
|
$0.035
|
|
|
$0.033
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-416-3
|
P-Channel
|
1 Channel
|
20 V
|
250 mA
|
1.1 Ohms
|
- 10 V, 10 V
|
1 V
|
|
- 55 C
|
+ 150 C
|
500 mW
|
Enhancement
|
|
U-MOSVII
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LowON Res MOSFET ID=-.25A VDSS=-20V
- SSM3J35AMFV,L3F
- Toshiba
-
1:
$0.23
-
16,210En existencias
-
24,000Se espera el 29/05/2026
|
N.º de artículo de Mouser
757-SSM3J35AMFVL3F
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LowON Res MOSFET ID=-.25A VDSS=-20V
|
|
16,210En existencias
24,000Se espera el 29/05/2026
|
|
|
$0.23
|
|
|
$0.137
|
|
|
$0.086
|
|
|
$0.063
|
|
|
$0.033
|
|
|
Ver
|
|
|
$0.049
|
|
|
$0.039
|
|
|
$0.029
|
|
Min.: 1
Mult.: 1
:
8,000
|
|
|
Si
|
SMD/SMT
|
SOT-723-3
|
P-Channel
|
1 Channel
|
20 V
|
250 mA
|
1.1 Ohms
|
- 10 V, 10 V
|
1 V
|
|
- 55 C
|
+ 150 C
|
500 mW
|
Enhancement
|
|
U-MOSVII
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Small-signal FET 0.25A 20V 12pF
- SSM3K37MFV,L3F
- Toshiba
-
1:
$0.25
-
1,354En existencias
-
16,000Se espera el 1/06/2026
|
N.º de artículo de Mouser
757-SSM3K37MFVL3F
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Small-signal FET 0.25A 20V 12pF
|
|
1,354En existencias
16,000Se espera el 1/06/2026
|
|
|
$0.25
|
|
|
$0.153
|
|
|
$0.096
|
|
|
$0.07
|
|
|
$0.037
|
|
|
Ver
|
|
|
$0.055
|
|
|
$0.044
|
|
|
$0.035
|
|
Min.: 1
Mult.: 1
:
8,000
|
|
|
Si
|
SMD/SMT
|
SOT-723-3
|
N-Channel
|
1 Channel
|
20 V
|
250 mA
|
2.2 Ohms
|
- 10 V, 10 V
|
350 mV
|
|
- 55 C
|
+ 150 C
|
150 mW
|
Enhancement
|
|
U-MOSIII
|
Reel, Cut Tape, MouseReel
|
|