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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ018N04LS6ATMA1
- Infineon Technologies
-
1:
$1.49
-
36,307En existencias
|
N.º de artículo de Mouser
726-BSZ018N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
36,307En existencias
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|
|
$1.49
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|
|
$1.22
|
|
|
$1.06
|
|
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$0.885
|
|
|
Ver
|
|
|
$0.716
|
|
|
$0.779
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|
|
$0.721
|
|
|
$0.716
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|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
2.1 mOhms
|
- 20 V, 20 V
|
2.3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
83 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ021N04LS6ATMA1
- Infineon Technologies
-
1:
$1.34
-
10,335En existencias
|
N.º de artículo de Mouser
726-BSZ021N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
10,335En existencias
|
|
|
$1.34
|
|
|
$1.09
|
|
|
$0.944
|
|
|
$0.863
|
|
|
$0.63
|
|
|
Ver
|
|
|
$0.721
|
|
|
$0.665
|
|
|
$0.629
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
2.4 mOhms
|
- 20 V, 20 V
|
2.3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
83 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ063N04LS6ATMA1
- Infineon Technologies
-
1:
$0.73
-
88,483En existencias
|
N.º de artículo de Mouser
726-BSZ063N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
88,483En existencias
|
|
|
$0.73
|
|
|
$0.592
|
|
|
$0.512
|
|
|
$0.476
|
|
|
$0.437
|
|
|
Ver
|
|
|
$0.437
|
|
|
$0.411
|
|
|
$0.40
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
7 mOhms
|
- 20 V, 20 V
|
2.3 V
|
9.5 nC
|
- 55 C
|
+ 175 C
|
38 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ024N04LS6ATMA1
- Infineon Technologies
-
1:
$1.11
-
257En existencias
-
10,000En pedido
|
N.º de artículo de Mouser
726-BSZ024N04LS6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
257En existencias
10,000En pedido
Existencias:
257 Se puede enviar inmediatamente
En pedido:
5,000 Se espera el 17/09/2026
5,000 Se espera el 24/09/2026
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$1.11
|
|
|
$0.902
|
|
|
$0.782
|
|
|
$0.724
|
|
|
Ver
|
|
|
$0.532
|
|
|
$0.683
|
|
|
$0.662
|
|
|
$0.532
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-FL-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
2.8 mOhms
|
- 20 V, 20 V
|
2.3 V
|
25 nC
|
- 55 C
|
+ 175 C
|
75 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|