|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPD25N06S4L30ATMA2
- Infineon Technologies
-
1:
$0.41
-
34,488En existencias
|
N.º de artículo de Mouser
726-IPD25N06S4L30ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
34,488En existencias
|
|
|
$0.41
|
|
|
$0.394
|
|
|
$0.367
|
|
|
$0.353
|
|
|
$0.297
|
|
|
Ver
|
|
|
$0.344
|
|
|
$0.29
|
|
|
$0.286
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
25 A
|
30 mOhms
|
- 16 V, 16 V
|
1.7 V
|
16.3 nC
|
- 55 C
|
+ 175 C
|
29 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 30A DPAK-2 OptiMOS-T2
- IPD30N03S4L-14
- Infineon Technologies
-
1:
$1.09
-
8,752En existencias
|
N.º de artículo de Mouser
726-IPD30N03S4L-14
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 30A DPAK-2 OptiMOS-T2
|
|
8,752En existencias
|
|
|
$1.09
|
|
|
$0.684
|
|
|
$0.448
|
|
|
$0.347
|
|
|
$0.246
|
|
|
Ver
|
|
|
$0.314
|
|
|
$0.236
|
|
|
$0.227
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
30 V
|
30 A
|
13.6 mOhms
|
- 16 V, 16 V
|
1.5 V
|
14 nC
|
- 55 C
|
+ 175 C
|
31 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TISON-8
- BSC0925ND
- Infineon Technologies
-
1:
$1.29
-
7,001En existencias
|
N.º de artículo de Mouser
726-BSC0925ND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TISON-8
|
|
7,001En existencias
|
|
|
$1.29
|
|
|
$0.817
|
|
|
$0.54
|
|
|
$0.442
|
|
|
$0.303
|
|
|
Ver
|
|
|
$0.376
|
|
|
$0.351
|
|
|
$0.292
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TISON-8
|
N-Channel
|
2 Channel
|
30 V
|
40 A
|
4.2 mOhms, 4.2 mOhms
|
- 20 V, 20 V
|
1.2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A D2PAK-2
- IPB026N06NATMA1
- Infineon Technologies
-
1:
$3.14
-
1,682En existencias
|
N.º de artículo de Mouser
726-IPB026N06NATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A D2PAK-2
|
|
1,682En existencias
|
|
|
$3.14
|
|
|
$2.05
|
|
|
$1.42
|
|
|
$1.20
|
|
|
$1.01
|
|
|
Ver
|
|
|
$0.976
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2.1 V
|
66 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A DPAK-2 OptiMOS-T2
- IPD90N04S4-03
- Infineon Technologies
-
1:
$1.92
-
5,491En existencias
|
N.º de artículo de Mouser
726-IPD90N04S4-03
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A DPAK-2 OptiMOS-T2
|
|
5,491En existencias
|
|
|
$1.92
|
|
|
$1.21
|
|
|
$0.813
|
|
|
$0.666
|
|
|
$0.536
|
|
|
Ver
|
|
|
$0.583
|
|
|
$0.486
|
|
|
$0.481
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
90 A
|
2.7 mOhms
|
- 20 V, 20 V
|
2 V
|
66 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPD90N06S405ATMA2
- Infineon Technologies
-
1:
$2.19
-
13,911En existencias
|
N.º de artículo de Mouser
726-IPD90N06S405ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
13,911En existencias
|
|
|
$2.19
|
|
|
$1.40
|
|
|
$0.949
|
|
|
$0.756
|
|
|
$0.609
|
|
|
Ver
|
|
|
$0.712
|
|
|
$0.593
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
5.1 mOhms
|
- 20 V, 20 V
|
3 V
|
81 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -30V 50A DPAK-4 OptiMOS P
- SPD50P03L G
- Infineon Technologies
-
1:
$3.16
-
2,455En existencias
|
N.º de artículo de Mouser
726-SPD50P03LG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -30V 50A DPAK-4 OptiMOS P
|
|
2,455En existencias
|
|
|
$3.16
|
|
|
$2.05
|
|
|
$1.51
|
|
|
$1.26
|
|
|
$1.02
|
|
|
Ver
|
|
|
$1.09
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
30 V
|
50 A
|
5.7 mOhms
|
- 20 V, 20 V
|
2 V
|
126 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSC0500NSIATMA1
- Infineon Technologies
-
1:
$2.05
-
4,735En existencias
|
N.º de artículo de Mouser
726-BSC0500NSIATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
4,735En existencias
|
|
|
$2.05
|
|
|
$1.31
|
|
|
$0.887
|
|
|
$0.705
|
|
|
Ver
|
|
|
$0.543
|
|
|
$0.653
|
|
|
$0.602
|
|
|
$0.543
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
1.3 mOhms
|
- 20 V, 20 V
|
2 V
|
52 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8 OptiMOS 2
- BSC100N10NSF G
- Infineon Technologies
-
1:
$2.61
-
10,717En existencias
|
N.º de artículo de Mouser
726-BSC100N10NSFG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8 OptiMOS 2
|
|
10,717En existencias
|
|
|
$2.61
|
|
|
$1.68
|
|
|
$1.17
|
|
|
$0.935
|
|
|
Ver
|
|
|
$0.764
|
|
|
$0.864
|
|
|
$0.82
|
|
|
$0.764
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
90 A
|
10 mOhms
|
- 20 V, 20 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 160A D2PAK-6 OptiMOS 3
- IPB039N10N3GATMA1
- Infineon Technologies
-
1:
$3.91
-
2,075En existencias
|
N.º de artículo de Mouser
726-IPB039N10N3GATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 160A D2PAK-6 OptiMOS 3
|
|
2,075En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
100 V
|
160 A
|
3.3 mOhms
|
- 20 V, 20 V
|
2 V
|
117 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 20A TDSON-8 OptiMOS-T2
- IPG20N04S4L-08
- Infineon Technologies
-
1:
$2.04
-
7,282En existencias
|
N.º de artículo de Mouser
726-IPG20N04S4L-08
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 20A TDSON-8 OptiMOS-T2
|
|
7,282En existencias
|
|
|
$2.04
|
|
|
$1.29
|
|
|
$0.861
|
|
|
$0.706
|
|
|
Ver
|
|
|
$0.509
|
|
|
$0.618
|
|
|
$0.60
|
|
|
$0.509
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
40 V
|
20 A
|
7.2 mOhms, 7.2 mOhms
|
- 16 V, 16 V
|
1.2 V
|
39 nC
|
- 55 C
|
+ 175 C
|
54 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPI051N15N5AKSA1
- Infineon Technologies
-
1:
$7.01
-
454En existencias
|
N.º de artículo de Mouser
726-IPI051N15N5AKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
454En existencias
|
|
|
$7.01
|
|
|
$5.13
|
|
|
$4.15
|
|
|
$2.85
|
|
|
Ver
|
|
|
$2.84
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
150 V
|
120 A
|
5.1 mOhms
|
- 20 V, 20 V
|
3.8 V
|
100 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A TO220-3
- IPP037N08N3GXKSA1
- Infineon Technologies
-
1:
$3.63
-
3,529En existencias
|
N.º de artículo de Mouser
726-IPP037N08N3GXKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A TO220-3
|
|
3,529En existencias
|
|
|
$3.63
|
|
|
$1.38
|
|
|
$1.29
|
|
|
$1.28
|
|
|
Ver
|
|
|
$1.23
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
80 V
|
100 A
|
3.5 mOhms
|
- 20 V, 20 V
|
3 V
|
117 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
OptiMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 7 Power-Transistor
- IAUZN08S7N046ATMA1
- Infineon Technologies
-
1:
$2.38
-
3,438En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IAUZN08S7N046ATM
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 7 Power-Transistor
|
|
3,438En existencias
|
|
|
$2.38
|
|
|
$1.52
|
|
|
$1.05
|
|
|
$0.894
|
|
|
Ver
|
|
|
$0.622
|
|
|
$0.747
|
|
|
$0.689
|
|
|
$0.622
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PG-TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
99 A
|
4.6 mOhms
|
20 V
|
3.2 V
|
27.2 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T
- IPB70N10S3L-12
- Infineon Technologies
-
1:
$3.65
-
2,894En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPB70N10S3L-12
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T
|
|
2,894En existencias
|
|
|
$3.65
|
|
|
$2.39
|
|
|
$1.68
|
|
|
$1.47
|
|
|
$1.19
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
70 A
|
12 mOhms
|
- 20 V, 20 V
|
1.7 V
|
60 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A DPAK-2 OptiMOS-T
- IPD90N04S3-04
- Infineon Technologies
-
1:
$2.99
-
1,800En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD90N04S3-04
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A DPAK-2 OptiMOS-T
|
|
1,800En existencias
|
|
|
$2.99
|
|
|
$2.94
|
|
|
$0.903
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
90 A
|
3.8 mOhms
|
- 20 V, 20 V
|
4 V
|
60 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPTG039N15NM5ATMA1
- Infineon Technologies
-
1:
$6.66
-
2,482En existencias
|
N.º de artículo de Mouser
726-TG039N15NM5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
2,482En existencias
|
|
|
$6.66
|
|
|
$4.49
|
|
|
$4.48
|
|
|
$3.30
|
|
|
$3.29
|
|
|
$2.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HSOG-8
|
N-Channel
|
1 Channel
|
150 V
|
190 A
|
3.9 mOhms
|
- 20 V, 20 V
|
3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
319 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPD100N06S403ATMA2
- Infineon Technologies
-
1:
$2.71
-
3,795En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD100N06S403ATM
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
3,795En existencias
|
|
|
$2.71
|
|
|
$1.76
|
|
|
$1.21
|
|
|
$0.977
|
|
|
$0.902
|
|
|
$0.798
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
3.5 mOhms
|
- 20 V, 20 V
|
3 V
|
128 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 50A DPAK-2 OptiMOS-T
- IPD50N04S3-08
- Infineon Technologies
-
1:
$2.14
-
2,140En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD50N04S3-08
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 50A DPAK-2 OptiMOS-T
|
|
2,140En existencias
|
|
|
$2.14
|
|
|
$1.47
|
|
|
$1.02
|
|
|
$0.862
|
|
|
$0.614
|
|
|
Ver
|
|
|
$0.72
|
|
|
$0.584
|
|
|
$0.575
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
50 A
|
8 mOhms
|
- 20 V, 20 V
|
4 V
|
27 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- BSC034N06NSATMA1
- Infineon Technologies
-
1:
$2.57
-
13,563En existencias
|
N.º de artículo de Mouser
726-BSC034N06NSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
13,563En existencias
|
|
|
$2.57
|
|
|
$1.66
|
|
|
$1.14
|
|
|
$0.912
|
|
|
Ver
|
|
|
$0.742
|
|
|
$0.862
|
|
|
$0.798
|
|
|
$0.742
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
3.4 mOhms
|
- 20 V, 20 V
|
2.1 V
|
33 nC
|
- 55 C
|
+ 150 C
|
74 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 85A TDSON-8 OptiMOS 3
- BSC050N04LS G
- Infineon Technologies
-
1:
$1.21
-
5,151En existencias
|
N.º de artículo de Mouser
726-BSC050N04LSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 85A TDSON-8 OptiMOS 3
|
|
5,151En existencias
|
|
|
$1.21
|
|
|
$0.753
|
|
|
$0.493
|
|
|
$0.382
|
|
|
$0.273
|
|
|
Ver
|
|
|
$0.346
|
|
|
$0.322
|
|
|
$0.261
|
|
|
$0.258
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
85 A
|
4.2 mOhms
|
- 20 V, 20 V
|
1.2 V
|
47 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 44A TDSON-8 OptiMOS
- BSC0909NS
- Infineon Technologies
-
1:
$0.88
-
8,483En existencias
|
N.º de artículo de Mouser
726-BSC0909NS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 44A TDSON-8 OptiMOS
|
|
8,483En existencias
|
|
|
$0.88
|
|
|
$0.549
|
|
|
$0.356
|
|
|
$0.273
|
|
|
$0.193
|
|
|
Ver
|
|
|
$0.224
|
|
|
$0.171
|
|
|
$0.168
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
34 V
|
44 A
|
7.7 mOhms
|
- 20 V, 20 V
|
2 V
|
9.6 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 39A TDSON-8 OptiMOS 3
- BSC120N03LS G
- Infineon Technologies
-
1:
$0.86
-
11,140En existencias
|
N.º de artículo de Mouser
726-BSC120N03LSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 39A TDSON-8 OptiMOS 3
|
|
11,140En existencias
|
|
|
$0.86
|
|
|
$0.528
|
|
|
$0.361
|
|
|
$0.284
|
|
|
$0.184
|
|
|
Ver
|
|
|
$0.236
|
|
|
$0.214
|
|
|
$0.175
|
|
|
$0.165
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
39 A
|
10 mOhms
|
- 20 V, 20 V
|
1 V
|
15 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC252N10NSFGATMA1
- Infineon Technologies
-
1:
$1.50
-
24,303En existencias
|
N.º de artículo de Mouser
726-BSC252N10NSFGATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
24,303En existencias
|
|
|
$1.50
|
|
|
$1.01
|
|
|
$0.716
|
|
|
$0.565
|
|
|
$0.422
|
|
|
Ver
|
|
|
$0.494
|
|
|
$0.488
|
|
|
$0.421
|
|
|
$0.411
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
19.5 mOhms
|
- 20 V, 20 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 18A TSDSON-8 OptiMOS 3
- BSZ440N10NS3 G
- Infineon Technologies
-
1:
$1.17
-
78,541En existencias
|
N.º de artículo de Mouser
726-BSZ440N10NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 18A TSDSON-8 OptiMOS 3
|
|
78,541En existencias
|
|
|
$1.17
|
|
|
$0.732
|
|
|
$0.482
|
|
|
$0.382
|
|
|
$0.263
|
|
|
Ver
|
|
|
$0.34
|
|
|
$0.311
|
|
|
$0.261
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
18 A
|
38 mOhms
|
- 20 V, 20 V
|
2 V
|
9.1 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|