|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 22 mOhm typ., 84 A STMESH trench T Power MOSFET
- STWA60N028T
- STMicroelectronics
-
1:
$7.07
-
310En existencias
-
1,200En pedido
-
Nuevo producto
|
N.º de artículo de Mouser
511-STWA60N028T
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 22 mOhm typ., 84 A STMESH trench T Power MOSFET
|
|
310En existencias
1,200En pedido
Existencias:
310 Se puede enviar inmediatamente
En pedido:
600 Se espera el 18/09/2026
600 Se espera el 5/03/2027
Plazo de entrega de fábrica:
26 Semanas
|
|
|
$7.07
|
|
|
$4.73
|
|
|
$3.80
|
|
|
$3.38
|
|
|
Ver
|
|
|
$2.78
|
|
|
$2.75
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
84 A
|
28 mOhms
|
30 V
|
4.2 V
|
164 nC
|
- 55 C
|
+ 150 C
|
481 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.061 Ohm 40 A Mdmesh M5
- STL57N65M5
- STMicroelectronics
-
1:
$12.38
-
2,439En existencias
|
N.º de artículo de Mouser
511-STL57N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.061 Ohm 40 A Mdmesh M5
|
|
2,439En existencias
|
|
|
$12.38
|
|
|
$8.27
|
|
|
$7.16
|
|
|
$7.03
|
|
|
$5.96
|
|
|
$5.85
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
650 V
|
22.5 A
|
61 mOhms
|
- 25 V, 25 V
|
4 V
|
96 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
- SH68N65DM6AG
- STMicroelectronics
-
1:
$20.40
-
173En existencias
|
N.º de artículo de Mouser
511-SH68N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
|
|
173En existencias
|
|
|
$20.40
|
|
|
$13.01
|
|
|
$12.31
|
|
|
$12.31
|
|
Min.: 1
Mult.: 1
:
200
|
|
|
Si
|
|
|
N-Channel
|
|
650 V
|
64 A
|
35 mOhms
|
|
|
|
|
|
|
|
AQG 324
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
- STW65N023M9-4
- STMicroelectronics
-
1:
$18.64
-
459En existencias
|
N.º de artículo de Mouser
511-STW65N023M9-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
|
|
459En existencias
|
|
|
$18.64
|
|
|
$10.77
|
|
|
$10.76
|
|
|
$10.00
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
95 A
|
23 mOhms
|
- 30 V, 30 V
|
4.2 V
|
230 nC
|
- 55 C
|
+ 150 C
|
463 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
- STW65N045M9-4
- STMicroelectronics
-
1:
$10.47
-
576En existencias
|
N.º de artículo de Mouser
511-STW65N045M9-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
|
|
576En existencias
|
|
|
$10.47
|
|
|
$6.22
|
|
|
$5.87
|
|
|
$5.23
|
|
|
$4.96
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
54 A
|
45 mOhms
|
- 30 V, 30 V
|
4.2 V
|
80 nC
|
- 55 C
|
+ 150 C
|
312 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET
- STD80N340K6
- STMicroelectronics
-
1:
$4.61
-
2,368En existencias
|
N.º de artículo de Mouser
511-STD80N340K6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET
|
|
2,368En existencias
|
|
|
$4.61
|
|
|
$3.04
|
|
|
$2.15
|
|
|
$1.84
|
|
|
$1.50
|
|
|
Ver
|
|
|
$1.49
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
12 A
|
340 mOhms
|
- 10 V, 10 V
|
3 V
|
17.8 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 17 mOhm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3
- STL8N10F7
- STMicroelectronics
-
1:
$1.53
-
38,107En existencias
|
N.º de artículo de Mouser
511-STL8N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 17 mOhm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3
|
|
38,107En existencias
|
|
|
$1.53
|
|
|
$0.936
|
|
|
$0.639
|
|
|
$0.50
|
|
|
$0.478
|
|
|
$0.478
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
1 Channel
|
100 V
|
35 A
|
17 mOhms
|
- 20 V, 20 V
|
2.5 V
|
25 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 20 Amp
- STP20NM60FD
- STMicroelectronics
-
1:
$6.60
-
4,453En existencias
|
N.º de artículo de Mouser
511-STP20NM60FD
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 20 Amp
|
|
4,453En existencias
|
|
|
$6.60
|
|
|
$4.59
|
|
|
$4.35
|
|
|
$3.80
|
|
|
$3.31
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
290 mOhms
|
- 30 V, 30 V
|
3 V
|
54 nC
|
- 65 C
|
+ 150 C
|
192 W
|
Enhancement
|
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
- STL36DN6F7
- STMicroelectronics
-
1:
$1.52
-
41,498En existencias
|
N.º de artículo de Mouser
511-STL36DN6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
|
|
41,498En existencias
|
|
|
$1.52
|
|
|
$0.716
|
|
|
$0.637
|
|
|
$0.499
|
|
|
$0.391
|
|
|
Ver
|
|
|
$0.498
|
|
|
$0.379
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
2 Channel
|
60 V
|
33 A
|
23 mOhms, 23 mOhms
|
- 20 V, 20 V
|
2 V
|
8 nC
|
- 55 C
|
+ 175 C
|
58 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
- STD12N60DM2AG
- STMicroelectronics
-
1:
$3.41
-
2,383En existencias
|
N.º de artículo de Mouser
511-STD12N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
|
|
2,383En existencias
|
|
|
$3.41
|
|
|
$2.21
|
|
|
$1.53
|
|
|
$1.28
|
|
|
$1.21
|
|
|
$1.11
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
10 A
|
440 mOhms
|
- 25 V, 25 V
|
3 V
|
14.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) RF POWER transistor, N-channel enhancement-mode, lateral Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
- PD57018S-E
- STMicroelectronics
-
1:
$32.57
-
498En existencias
|
N.º de artículo de Mouser
511-PD57018S-E
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) RF POWER transistor, N-channel enhancement-mode, lateral Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
|
|
498En existencias
|
|
|
$32.57
|
|
|
$23.90
|
|
|
$22.34
|
|
|
$21.95
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerSO-10RF-2
|
N-Channel
|
1 Channel
|
65 V
|
2.5 A
|
760 mOhms
|
- 20 V, 20 V
|
2 V
|
|
- 65 C
|
+ 165 C
|
31.7 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 11 Amp Power MDmesh
- STB11NM80T4
- STMicroelectronics
-
1:
$8.70
-
1,402En existencias
|
N.º de artículo de Mouser
511-STB11NM80
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 11 Amp Power MDmesh
|
|
1,402En existencias
|
|
|
$8.70
|
|
|
$4.73
|
|
|
$4.35
|
|
|
$4.29
|
|
|
$4.06
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
400 mOhms
|
- 30 V, 30 V
|
3 V
|
43.6 nC
|
- 65 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.15 Ohm typ., 24 A MDmesh K5 Power MOSFET in a D2PAK package
- STB30N80K5
- STMicroelectronics
-
1:
$8.51
-
1,094En existencias
|
N.º de artículo de Mouser
511-STB30N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.15 Ohm typ., 24 A MDmesh K5 Power MOSFET in a D2PAK package
|
|
1,094En existencias
|
|
|
$8.51
|
|
|
$4.62
|
|
|
$4.25
|
|
|
$4.17
|
|
|
$3.94
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
24 A
|
180 mOhms
|
- 30 V, 30 V
|
3 V
|
43 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
- STB38N65M5
- STMicroelectronics
-
1:
$7.45
-
757En existencias
|
N.º de artículo de Mouser
511-STB38N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
|
|
757En existencias
|
|
|
$7.45
|
|
|
$3.99
|
|
|
$3.66
|
|
|
$3.49
|
|
|
$3.30
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
95 mOhms
|
- 25 V, 25 V
|
3 V
|
71 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 50 Amp
- STB55NF06T4
- STMicroelectronics
-
1:
$3.16
-
3,707En existencias
|
N.º de artículo de Mouser
511-STB55NF06
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 50 Amp
|
|
3,707En existencias
|
|
|
$3.16
|
|
|
$1.69
|
|
|
$1.43
|
|
|
$1.18
|
|
|
$1.13
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
50 A
|
18 mOhms
|
- 20 V, 20 V
|
2 V
|
60 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 900V 1.1 8A Zener SuperMESH
- STB9NK90Z
- STMicroelectronics
-
1:
$6.12
-
1,288En existencias
|
N.º de artículo de Mouser
511-STB9NK90Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 900V 1.1 8A Zener SuperMESH
|
|
1,288En existencias
|
|
|
$6.12
|
|
|
$3.22
|
|
|
$2.94
|
|
|
$2.77
|
|
|
$2.54
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
1.3 Ohms
|
- 30 V, 30 V
|
3 V
|
72 nC
|
- 55 C
|
+ 150 C
|
160 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
- STD13N60DM2
- STMicroelectronics
-
1:
$2.47
-
3,089En existencias
|
N.º de artículo de Mouser
511-STD13N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
3,089En existencias
|
|
|
$2.47
|
|
|
$1.59
|
|
|
$1.09
|
|
|
$0.864
|
|
|
$0.718
|
|
|
Ver
|
|
|
$0.794
|
|
|
$0.648
|
|
|
$0.64
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
310 mOhms
|
- 25 V, 25 V
|
3 V
|
19 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package
- STD13N65M2
- STMicroelectronics
-
1:
$2.32
-
3,078En existencias
|
N.º de artículo de Mouser
511-STD13N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package
|
|
3,078En existencias
|
|
|
$2.32
|
|
|
$1.13
|
|
|
$0.921
|
|
|
$0.793
|
|
|
$0.697
|
|
|
Ver
|
|
|
$0.723
|
|
|
$0.649
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
10 A
|
370 mOhms
|
- 25 V, 25 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 2.2 mOhm typ., 80 A STripFET F7 Power MOSFET in
- STD170N4F7AG
- STMicroelectronics
-
1:
$2.94
-
2,232En existencias
|
N.º de artículo de Mouser
511-STD170N4F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 2.2 mOhm typ., 80 A STripFET F7 Power MOSFET in
|
|
2,232En existencias
|
|
|
$2.94
|
|
|
$1.90
|
|
|
$1.30
|
|
|
$1.06
|
|
|
$0.946
|
|
|
Ver
|
|
|
$0.981
|
|
|
$0.915
|
|
|
$0.914
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
80 A
|
2.2 mOhms
|
- 20 V, 20 V
|
2 V
|
63 nC
|
- 55 C
|
+ 175 C
|
172 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 35 Amp
- STD35NF06T4
- STMicroelectronics
-
1:
$1.98
-
5,493En existencias
|
N.º de artículo de Mouser
511-STD35NF06
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 35 Amp
|
|
5,493En existencias
|
|
|
$1.98
|
|
|
$0.948
|
|
|
$0.847
|
|
|
$0.67
|
|
|
$0.599
|
|
|
$0.514
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
35 A
|
18 mOhms
|
- 20 V, 20 V
|
2 V
|
60 nC
|
- 55 C
|
+ 175 C
|
55 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AC Pwr switch
- STD40NF10
- STMicroelectronics
-
1:
$2.23
-
2,518En existencias
|
N.º de artículo de Mouser
511-STD40NF10
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) AC Pwr switch
|
|
2,518En existencias
|
|
|
$2.23
|
|
|
$1.08
|
|
|
$0.966
|
|
|
$0.769
|
|
|
$0.671
|
|
|
Ver
|
|
|
$0.717
|
|
|
$0.644
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
50 A
|
28 mOhms
|
- 20 V, 20 V
|
2 V
|
62 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 950 VDSS <3.5 RDS 4A ID 90W Pw
- STD5N95K3
- STMicroelectronics
-
1:
$4.02
-
6,491En existencias
|
N.º de artículo de Mouser
511-STD5N95K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 950 VDSS <3.5 RDS 4A ID 90W Pw
|
|
6,491En existencias
|
|
|
$4.02
|
|
|
$2.04
|
|
|
$1.85
|
|
|
$1.53
|
|
|
$1.44
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
4 A
|
3 Ohms
|
- 30 V, 30 V
|
3 V
|
19 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package
- STD80N240K6
- STMicroelectronics
-
1:
$5.95
-
2,544En existencias
|
N.º de artículo de Mouser
511-STD80N240K6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package
|
|
2,544En existencias
|
|
|
$5.95
|
|
|
$3.12
|
|
|
$2.85
|
|
|
$2.59
|
|
|
$2.44
|
|
|
$2.44
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
800 V
|
16 A
|
220 Ohms
|
- 30 V, 30 V
|
4 V
|
25.9 nC
|
- 55 C
|
+ 150 C
|
105 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 650V
- STF12N65M5
- STMicroelectronics
-
1:
$3.48
-
1,667En existencias
|
N.º de artículo de Mouser
511-STF12N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 650V
|
|
1,667En existencias
|
|
|
$3.48
|
|
|
$1.88
|
|
|
$1.45
|
|
|
$1.31
|
|
|
Ver
|
|
|
$1.16
|
|
|
$1.15
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
8.5 A
|
430 mOhms
|
- 25 V, 25 V
|
4 V
|
20 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
- STF24N60DM2
- STMicroelectronics
-
1:
$3.86
-
1,022En existencias
|
N.º de artículo de Mouser
511-STF24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
|
|
1,022En existencias
|
|
|
$3.86
|
|
|
$2.20
|
|
|
$1.76
|
|
|
$1.48
|
|
|
$1.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
175 mOhms
|
- 25 V, 25 V
|
3 V
|
29 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
