NXP Semiconductors GD3162 Advanced IGBT/SiC Gate Drivers

NXP Semiconductors GD3162 Advanced IGBT/SiC Gate Drivers are designed to drive SiC and IGBT modules in xEV traction inverters. The NXP Semiconductors GD3162 drivers enable space savings and performance through advanced gate-drive functionality. The device includes integrated galvanic isolation, a programmable SPI interface, and advanced protection features like overtemperature, desaturation, and current sense protection. With integrated boost capability, the GD3162 can directly drive most SiC MOSFET and IGBT/SiC module gates.

Features

Integrated boost capability for increased drive strength up to 10A/20A/30A source/sink current
25V maximum V_CC output voltage
Programmable ADC delay – up to 8μs sampling delay from rising or falling edge of PWM
Integrated HV temperature sensing (TSENSE) for NTC thermistor or diode sensors with programmable offset and gain
Fast V_CE DeSat detection and reaction time: <1µs (SiC)
Improved PWM deadtime range for reduced switching losses (SiC)

Programmable 2-level turn-off (2LTO) and soft-shutdown (SSD)
Provides either MCU-controlled or safety logic-controlled gate drive to actively discharge the DC link capacitor
Additional programmable fault pin (INTA)
Integrated HV fault management (FSISO)
Programmable V_CE output monitoring
Minimum common mode transient immunity (CMTI) of >100V/ns
5000V_rms galvanic isolation per UL1577 (planned)