|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 8.6A TO220FP-3
- IPA60R230P6XKSA1
- Infineon Technologies
-
1:
$2.70
-
75En existencias
|
N.º de artículo de Mouser
726-IPA60R230P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 8.6A TO220FP-3
|
|
75En existencias
|
|
|
$2.70
|
|
|
$1.27
|
|
|
$1.20
|
|
|
$0.917
|
|
|
Ver
|
|
|
$0.829
|
|
|
$0.825
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16.8 A
|
538 mOhms
|
- 20 V, 20 V
|
4 V
|
31 nC
|
- 55 C
|
+ 150 C
|
33 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.7A TO220FP-3
- IPA60R280P6XKSA1
- Infineon Technologies
-
1:
$2.46
-
836En existencias
|
N.º de artículo de Mouser
726-IPA60R280P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.7A TO220FP-3
|
|
836En existencias
|
|
|
$2.46
|
|
|
$1.21
|
|
|
$1.09
|
|
|
$0.871
|
|
|
Ver
|
|
|
$0.744
|
|
|
$0.728
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13.8 A
|
252 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25.5 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPAN70R360P7SXKSA1
- Infineon Technologies
-
1:
$1.79
-
1,699En existencias
|
N.º de artículo de Mouser
726-IPAN70R360P7SXKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,699En existencias
|
|
|
$1.79
|
|
|
$0.948
|
|
|
$0.77
|
|
|
$0.627
|
|
|
Ver
|
|
|
$0.456
|
|
|
$0.453
|
|
|
$0.424
|
|
|
$0.422
|
|
|
$0.413
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
700 V
|
12.5 A
|
300 mOhms
|
- 30 V, 30 V
|
2.5 V
|
16.4 nC
|
- 40 C
|
+ 150 C
|
26.5 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R360P7SAUMA1
- Infineon Technologies
-
1:
$1.25
-
3,012En existencias
|
N.º de artículo de Mouser
726-IPD60R360P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
3,012En existencias
|
|
|
$1.25
|
|
|
$0.785
|
|
|
$0.518
|
|
|
$0.403
|
|
|
$0.315
|
|
|
Ver
|
|
|
$0.366
|
|
|
$0.279
|
|
|
$0.273
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
300 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 40 C
|
+ 150 C
|
41 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R600P7SAUMA1
- Infineon Technologies
-
1:
$1.05
-
95En existencias
-
7,500Se espera el 12/03/2026
|
N.º de artículo de Mouser
726-IPD60R600P7SAUMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
95En existencias
7,500Se espera el 12/03/2026
|
|
|
$1.05
|
|
|
$0.659
|
|
|
$0.438
|
|
|
$0.336
|
|
|
$0.308
|
|
|
$0.243
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
600 mOhms
|
- 20 V, 20 V
|
3.5 V
|
9 nC
|
- 40 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN60R600P7SATMA1
- Infineon Technologies
-
1:
$1.05
-
4,741En existencias
|
N.º de artículo de Mouser
726-IPN60R600P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
4,741En existencias
|
|
|
$1.05
|
|
|
$0.655
|
|
|
$0.427
|
|
|
$0.328
|
|
|
$0.27
|
|
|
Ver
|
|
|
$0.297
|
|
|
$0.241
|
|
|
$0.223
|
|
|
$0.216
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
490 mOhms
|
- 20 V, 20 V
|
3 V
|
9 nC
|
- 40 C
|
+ 150 C
|
7 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN70R600P7SATMA1
- Infineon Technologies
-
1:
$1.10
-
3,298En existencias
|
N.º de artículo de Mouser
726-IPN70R600P7SATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
3,298En existencias
|
|
|
$1.10
|
|
|
$0.69
|
|
|
$0.452
|
|
|
$0.349
|
|
|
$0.288
|
|
|
Ver
|
|
|
$0.316
|
|
|
$0.258
|
|
|
$0.24
|
|
|
$0.237
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
700 V
|
8.5 A
|
490 mOhms
|
- 16 V, 16 V
|
2.5 V
|
10.5 nC
|
- 40 C
|
+ 150 C
|
6.9 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- IPD90R1K2C3ATMA2
- Infineon Technologies
-
1:
$2.19
-
584En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD90R1K2C3ATMA2
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
584En existencias
|
|
|
$2.19
|
|
|
$1.40
|
|
|
$0.972
|
|
|
$0.824
|
|
|
$0.635
|
|
|
Ver
|
|
|
$0.688
|
|
|
$0.601
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
900 V
|
5.1 A
|
1.2 Ohms
|
- 20 V, 20 V
|
3 V
|
28 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO247-3 CoolMOS C3
- SPW20N60C3
- Infineon Technologies
-
1:
$4.93
-
37En existencias
-
1,200En pedido
-
NRND
|
N.º de artículo de Mouser
726-SPW20N60C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO247-3 CoolMOS C3
|
|
37En existencias
1,200En pedido
Existencias:
37 Se puede enviar inmediatamente
En pedido:
480 Se espera el 5/03/2026
720 Se espera el 12/03/2026
Plazo de entrega de fábrica:
15 Semanas
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
20.7 A
|
190 mOhms
|
- 20 V, 20 V
|
2.1 V
|
87 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
- IPA60R190P6XKSA1
- Infineon Technologies
-
500:
$1.02
-
Plazo de entrega no en existencias 12 Semanas
|
N.º de artículo de Mouser
726-IPA60R190P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
|
|
Plazo de entrega no en existencias 12 Semanas
|
|
Min.: 500
Mult.: 500
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
|
|
|
|
|
|
|
|
|
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V TO-220FP-3
- IPA65R650CEXKSA1
- Infineon Technologies
-
1:
$1.62
-
Plazo de entrega no en existencias 8 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPA65R650CEXKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V TO-220FP-3
|
|
Plazo de entrega no en existencias 8 Semanas
|
|
|
$1.62
|
|
|
$0.699
|
|
|
$0.633
|
|
|
$0.515
|
|
|
Ver
|
|
|
$0.427
|
|
|
$0.426
|
|
|
$0.412
|
|
|
$0.409
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
10.1 A
|
650 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 40 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- IPP90R1K2C3XKSA2
- Infineon Technologies
-
1:
$1.97
-
Plazo de entrega no en existencias 8 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPP90R1K2C3XKSA2
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
Plazo de entrega no en existencias 8 Semanas
|
|
|
$1.97
|
|
|
$1.41
|
|
|
$1.14
|
|
|
$0.817
|
|
|
Ver
|
|
|
$0.773
|
|
|
$0.765
|
|
|
$0.759
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
5.1 A
|
1.2 Ohms
|
- 20 V, 20 V
|
3.5 V
|
28 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Tube
|
|