|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in TO-220FP package
- STF23N80K5
- STMicroelectronics
-
1:
$6.02
-
795En existencias
|
N.º de artículo de Mouser
511-STF23N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in TO-220FP package
|
|
795En existencias
|
|
|
$6.02
|
|
|
$3.23
|
|
|
$2.95
|
|
|
$2.68
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
16 A
|
280 mOhms
|
- 30 V, 30 V
|
4 V
|
33 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 2.75 Ohm typ., 2 A MDmesh K5 Power MOSFET in a TO-220FP package
- STF3LN80K5
- STMicroelectronics
-
1:
$2.05
-
3,187En existencias
|
N.º de artículo de Mouser
511-STF3LN80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 2.75 Ohm typ., 2 A MDmesh K5 Power MOSFET in a TO-220FP package
|
|
3,187En existencias
|
|
|
$2.05
|
|
|
$1.02
|
|
|
$0.904
|
|
|
$0.723
|
|
|
Ver
|
|
|
$0.639
|
|
|
$0.609
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
2 A
|
2.75 Ohms
|
- 30 V, 30 V
|
3 V
|
2.63 nC
|
- 55 C
|
+ 150 C
|
20 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220FP package
- STF40N65M2
- STMicroelectronics
-
1:
$5.01
-
1,102En existencias
|
N.º de artículo de Mouser
511-STF40N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220FP package
|
|
1,102En existencias
|
|
|
$5.01
|
|
|
$4.01
|
|
|
$3.25
|
|
|
$2.89
|
|
|
$2.55
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
32 A
|
87 mOhms
|
- 25 V, 25 V
|
2 V
|
56.5 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 pac
- STH240N10F7-2
- STMicroelectronics
-
1:
$4.70
-
940En existencias
|
N.º de artículo de Mouser
511-STH240N10F7-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 pac
|
|
940En existencias
|
|
|
$4.70
|
|
|
$3.11
|
|
|
$2.39
|
|
|
$2.12
|
|
|
$1.88
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
2.5 mOhms
|
- 20 V, 20 V
|
2.5 V
|
160 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 0.00275 Ohm 32A STripFET V 40V
- STL140N4LLF5
- STMicroelectronics
-
1:
$3.17
-
2,858En existencias
|
N.º de artículo de Mouser
511-STL140N4LLF5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 0.00275 Ohm 32A STripFET V 40V
|
|
2,858En existencias
|
|
|
$3.17
|
|
|
$2.06
|
|
|
$1.51
|
|
|
$1.28
|
|
|
$1.15
|
|
|
$1.15
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
140 A
|
2.75 Ohms
|
- 22 V, 22 V
|
1 V
|
45 nC
|
- 55 C
|
+ 150 C
|
80 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6
- STL160N4F7
- STMicroelectronics
-
1:
$1.94
-
4,235En existencias
|
N.º de artículo de Mouser
511-STL160N4F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6
|
|
4,235En existencias
|
|
|
$1.94
|
|
|
$1.24
|
|
|
$0.835
|
|
|
$0.663
|
|
|
$0.606
|
|
|
$0.577
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
2.5 mOhms
|
- 20 V, 20 V
|
2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
4.8 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.9 mOhm typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5
- STL260N4F7
- STMicroelectronics
-
1:
$3.67
-
5,403En existencias
|
N.º de artículo de Mouser
511-STL260N4F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.9 mOhm typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5
|
|
5,403En existencias
|
|
|
$3.67
|
|
|
$2.41
|
|
|
$1.69
|
|
|
$1.48
|
|
|
$1.38
|
|
|
$1.38
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.1 mOhms
|
- 20 V, 20 V
|
4 V
|
72 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 17 Amp Zener SuperMESH
- STP20NK50Z
- STMicroelectronics
-
1:
$4.96
-
4,469En existencias
|
N.º de artículo de Mouser
511-STP20NK50Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 17 Amp Zener SuperMESH
|
|
4,469En existencias
|
|
|
$4.96
|
|
|
$3.03
|
|
|
$2.52
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
17 A
|
270 mOhms
|
- 30 V, 30 V
|
3 V
|
85 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V MDMesh
- STP30N65M5
- STMicroelectronics
-
1:
$7.40
-
708En existencias
|
N.º de artículo de Mouser
511-STP30N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V MDMesh
|
|
708En existencias
|
|
|
$7.40
|
|
|
$4.13
|
|
|
$3.80
|
|
|
$3.62
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
22 A
|
125 mOhms
|
- 25 V, 25 V
|
3 V
|
64 nC
|
- 55 C
|
+ 150 C
|
140 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
- STP33N60DM2
- STMicroelectronics
-
1:
$4.87
-
1,406En existencias
|
N.º de artículo de Mouser
511-STP33N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
|
|
1,406En existencias
|
|
|
$4.87
|
|
|
$2.53
|
|
|
$2.30
|
|
|
$2.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
130 mOhms
|
- 25 V, 25 V
|
3 V
|
43 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-220 packag
- STP45N60DM6
- STMicroelectronics
-
1:
$7.01
-
1,008En existencias
|
N.º de artículo de Mouser
511-STP45N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-220 packag
|
|
1,008En existencias
|
|
|
$7.01
|
|
|
$5.18
|
|
|
$4.19
|
|
|
$3.73
|
|
|
$3.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
99 mOhms
|
- 25 V, 25 V
|
3.25 V
|
44 nC
|
- 55 C
|
+ 150 C
|
210 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 5.2 A Zener SuperMESH
- STP7NK80Z
- STMicroelectronics
-
1:
$3.82
-
1,935En existencias
|
N.º de artículo de Mouser
511-STP7NK80Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 5.2 A Zener SuperMESH
|
|
1,935En existencias
|
|
|
$3.82
|
|
|
$1.94
|
|
|
$1.73
|
|
|
$1.44
|
|
|
$1.43
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
5.2 A
|
1.8 Ohms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET Dual N-CH 60V 4A
- STS5DNF60L
- STMicroelectronics
-
1:
$1.67
-
3,793En existencias
|
N.º de artículo de Mouser
511-STS5DNF60L
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET Dual N-CH 60V 4A
|
|
3,793En existencias
|
|
|
$1.67
|
|
|
$1.06
|
|
|
$0.707
|
|
|
$0.557
|
|
|
$0.509
|
|
|
$0.467
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
2 Channel
|
60 V
|
5 A
|
45 mOhms
|
- 15 V, 15 V
|
1.7 V
|
15 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 20 Volt 6 Amp
- STS6NF20V
- STMicroelectronics
-
1:
$0.95
-
16,886En existencias
|
N.º de artículo de Mouser
511-STS6NF20V
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 20 Volt 6 Amp
|
|
16,886En existencias
|
|
|
$0.95
|
|
|
$0.59
|
|
|
$0.385
|
|
|
$0.296
|
|
|
$0.243
|
|
|
Ver
|
|
|
$0.268
|
|
|
$0.239
|
|
|
$0.215
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
1 Channel
|
20 V
|
6 A
|
30 mOhms
|
- 12 V, 12 V
|
600 mV
|
11.5 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.35Ohm 11A Mdmesh M2
- STU13N60M2
- STMicroelectronics
-
1:
$2.12
-
2,414En existencias
|
N.º de artículo de Mouser
511-STU13N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.35Ohm 11A Mdmesh M2
|
|
2,414En existencias
|
|
|
$2.12
|
|
|
$0.959
|
|
|
$0.862
|
|
|
$0.725
|
|
|
Ver
|
|
|
$0.668
|
|
|
$0.636
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
380 mOhms
|
- 25 V, 25 V
|
3 V
|
17 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh
- STU7NM60N
- STMicroelectronics
-
1:
$2.93
-
1,749En existencias
|
N.º de artículo de Mouser
511-STU7NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh
|
|
1,749En existencias
|
|
|
$2.93
|
|
|
$1.37
|
|
|
$1.23
|
|
|
$1.06
|
|
|
$0.992
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
600 V
|
5 A
|
900 mOhms
|
- 25 V, 25 V
|
2 V
|
14 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1700 V, 2.3 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-247 package
- STW12N170K5
- STMicroelectronics
-
1:
$10.62
-
1,113En existencias
|
N.º de artículo de Mouser
511-STW12N170K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1700 V, 2.3 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-247 package
|
|
1,113En existencias
|
|
|
$10.62
|
|
|
$7.41
|
|
|
$5.76
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
5 A
|
2.9 Ohms
|
- 30 V, 30 V
|
3 V
|
37 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V 0.033ohm 69A Mdmesh
- STW77N65M5
- STMicroelectronics
-
1:
$16.25
-
511En existencias
|
N.º de artículo de Mouser
511-STW77N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V 0.033ohm 69A Mdmesh
|
|
511En existencias
|
|
|
$16.25
|
|
|
$10.03
|
|
|
$9.90
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
69 A
|
30 mOhms
|
- 25 V, 25 V
|
4 V
|
200 nC
|
- 55 C
|
+ 125 C
|
400 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 1.27 mOhm typ., 120 A STripFET F6 Power MOSFET
- STLD200N4F6AG
- STMicroelectronics
-
1:
$4.01
-
2,251En existencias
-
NRND
|
N.º de artículo de Mouser
511-STLD200N4F6AG
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 1.27 mOhm typ., 120 A STripFET F6 Power MOSFET
|
|
2,251En existencias
|
|
|
$4.01
|
|
|
$2.64
|
|
|
$1.93
|
|
|
$1.71
|
|
|
$1.66
|
|
|
$1.52
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.27 mOhms
|
- 20 V, 20 V
|
2 V
|
172 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 11 Amp
- STP11NM60FDFP
- STMicroelectronics
-
1:
$4.57
-
537En existencias
-
NRND
|
N.º de artículo de Mouser
511-STP11NM60FDFP
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 11 Amp
|
|
537En existencias
|
|
|
$4.57
|
|
|
$3.31
|
|
|
$2.91
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
450 mOhms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 65 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
- STB12N60DM2AG
- STMicroelectronics
-
1:
$3.38
-
227En existencias
|
N.º de artículo de Mouser
511-STB12N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
|
|
227En existencias
|
|
|
$3.38
|
|
|
$2.20
|
|
|
$1.69
|
|
|
$1.41
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
430 mOhms
|
|
5 V
|
14.5 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Nchannel 30 V 0.0024 Ohm80A DPAK STripFET
- STD155N3LH6
- STMicroelectronics
-
1:
$2.36
-
782En existencias
|
N.º de artículo de Mouser
511-STD155N3LH6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Nchannel 30 V 0.0024 Ohm80A DPAK STripFET
|
|
782En existencias
|
|
|
$2.36
|
|
|
$1.52
|
|
|
$1.03
|
|
|
$0.807
|
|
|
$0.762
|
|
|
$0.733
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
30 V
|
80 A
|
3 mOhms
|
- 20 V, 20 V
|
1 V
|
80 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
- STU6N65M2
- STMicroelectronics
-
1:
$1.61
-
45En existencias
|
N.º de artículo de Mouser
511-STU6N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
|
|
45En existencias
|
|
|
$1.61
|
|
|
$0.835
|
|
|
$0.622
|
|
|
$0.518
|
|
|
Ver
|
|
|
$0.437
|
|
|
$0.431
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
4 A
|
1.35 Ohms
|
- 25 V, 25 V
|
3 V
|
9.8 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
- STP16N65M2
- STMicroelectronics
-
1:
$2.84
-
251En existencias
-
1,000Se espera el 27/07/2026
|
N.º de artículo de Mouser
511-STP16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
|
|
251En existencias
1,000Se espera el 27/07/2026
|
|
|
$2.84
|
|
|
$1.83
|
|
|
$1.31
|
|
|
$1.09
|
|
|
$0.948
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
360 mOhms
|
- 25 V, 25 V
|
3 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP pack
- STF18N60DM2
- STMicroelectronics
-
1:
$3.08
-
371En existencias
|
N.º de artículo de Mouser
511-STF18N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP pack
|
|
371En existencias
|
|
|
$3.08
|
|
|
$2.00
|
|
|
$1.47
|
|
|
$1.23
|
|
|
$1.07
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
260 mOhms
|
- 25 V, 25 V
|
3 V
|
20 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|