Nuevos Controladores de puertas
Renesas/Dialog GaN 240W EPR Solutions deliver a high-power-density AC/DC solution, supporting up to 500W of output power across a wide Vin/Vout range. These devices are interleaved PFC + HWLLC combo controllers for 3W/cc power-density designs. The GaN 240W EPR solutions feature a peak efficiency of 96.5%, and an intelligent digital 2-stage control optimizes for excellent efficiency, EMI, and audible noise. These devices provide a <41mW, highly energy-efficient solution when no load is connected, meeting global energy-efficiency regulations. The GaN 240W EPR solutions support high-power USB PD 3.2 240W and work seamlessly with the Renesas PD source controller in Winning Combo EBC10293. Typical applications include USB PD adapters, rapid-charging adapters, LED drivers, wall outlets, TV power supplies, power tools, lawn mowers, audio/smart speakers, industrial power, and factory automation.
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Renesas Electronics GaN 240W EPR SolutionsDeliver a high-power-density AC/DC solution, supporting up to 500W across a wide Vin/Vout range.7/7/2026
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onsemi NCV84003G High-Side eFuseThe device can replace mechanical fuses & provide power in a smart power distribution architecture.6/25/2026 -
STMicroelectronics L98GD8E 8-Channel MOSFET Pre-DriverThe device is configurable for low-side, high-side, peak and hold, and H-bridge load control.5/29/2026 -
RECOM Power ICs, Transformers, & Discrete SolutionsFeatures components ideal for energy, industrial, and medical applications.4/24/2026 -
RECOM Power RVP Primary-Side Power ICsSupports input voltages up to 30V and is available in various topologies to meet system needs.4/1/2026 -
onsemi FAD1100-F085 Ignition Gate Drive ICDirectly drives an ignition IGBT and regulates both the coil current and the resulting spark event.3/3/2026 -
Microchip Technology MCP14T0517 Push-Pull Transformer DriversDesigned for compact, isolated power supplies operating from a 3VDC to 5.5VDC input.2/2/2026 -
Texas Instruments Controladores de puertas de medio puente UCC2773x/-Q1Provides a 3.5A source and 4A sink current capability designed to drive power MOSFETs and IGBTs.1/29/2026 -
onsemi NCV84003F Single Channel High Side DriverThe device is used to switch a wide variety of loads, such as bulbs, solenoids, and other actuators.1/22/2026 -
Texas Instruments UCC5713x/UCC5713x-Q1 Low-Side Gate DriversThese devices are capable of effectively driving MOSFET, IGBT, and SiC power switches.12/24/2025 -
STMicroelectronics STDRIVEG612 600V Half-Bridge Gate DriverHalf-bridge gate drivers that are optimized for 5V driving enhanced-mode GaN HEMTs.12/19/2025 -
STMicroelectronics STDRIVEG212 220V Half-Bridge Gate DriverHalf-bridge gate drivers that are optimized for 5V driving enhanced-mode GaN HEMTs.12/19/2025 -
Texas Instruments UCC27302A/UCC27302A-Q1 Gate DriversDesigned for switching applications that require fast response and high current capability.11/19/2025 -
Toshiba TB9084FTG Automotive Gate Driver ICDesigned for automotive brushless motors, equipped with a charge pump and several types of circuits.11/19/2025 -
STMicroelectronics STSID140-12 SMD Isolated Thyristor DriverDesigned to provide robust, efficient triggering for power thyristors in industrial & consumer apps.10/28/2025 -
Texas Instruments UCC27212A-Q1 Gate DriverAutomotive driver designed for high efficiency and robust performance in various applications.10/9/2025 -
Texas Instruments UCC21351x-Q1 Gate DriversEnables high efficiency, high power density, and robustness in a wide variety of power applications.10/9/2025 -
Infineon Technologies EiceDRIVER 1ED301xMC12I Gate Driver ICsOpto-compatible, galvanically isolated single-channel gate drivers for IGBT, Si, or SiC MOSFET.9/30/2025 -
Texas Instruments LMG3626 700V 220mΩ GaN FETCombines gate driver, protection, and current sensing in a single 8mm x 5.3mm QFN package.9/29/2025 -
Texas Instruments LMG2656 650V GaN Power-FET Half BridgeIt simplifies design, reduces component count, and saves board space in a 6mm by 8mm QFN package.9/9/2025 -
IXYS IX4352NEAU Low-Side Gate DriversDesigned specifically to drive SiC MOSFETs and high-power IGBTs.9/4/2025 -
STMicroelectronics STDRIVEG210 Half-Bridge Gate DriversFor N‑channel enhancement mode GaN and high-side driver section can stand a voltage rail up to 220V.8/28/2025 -
STMicroelectronics STDRIVEG211 Half-Bridge Gate DriversFor N‑channel enhancement mode GaN and high-side driver section can stand a voltage rail up to 220V.8/28/2025 -
STMicroelectronics L98GD8 Automotive MOSFET Pre-DriverConfigurable for low-side, high-side, peak and hold, and H-bridge load control.8/18/2025 -
EPC EPC23102 100V 35A ePower™ Stage ICCombines core blocks and eGaN® output FETs into a single monolithic IC in a 3.5mm x 5mm QFN package.8/1/2025