Nuevos Semiconductores discretos
Bourns CDSOT23-SM712-Q Surface Mount TVS Diode provides protection for data ports that meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT), and IEC 61000-4-5 (surge) requirements. This diode is AEC-Q101 compliant and offers a working peak voltage of 7V to 12V, 30kV maximum ESD protection, and a 400W peak pulse power rating. The SOT23 packaged device mounts directly on the industry-standard SOT23 footprint, and this diode conforms to JEDEC standards, making it easy to handle with standard pick-and-place equipment. Bourns CDSOT23-SM712-Q Surface Mount TVS Diode is suitable for wireless systems, network protection, portable electronics, and RS-485 port protection.
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Bourns CDSOT23-SM712-Q Surface Mount TVS DiodeProvides protection for data ports in accordance with IEC 61000-4-2, IEC 61000-4-4, & IEC 61000-4-5.5/12/2026
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Littelfuse Diodos TVS FlatSuppressX™ TP1KSMB-FLDesigned specifically to protect sensitive electronic equipment from voltage transients.5/4/2026 -
Littelfuse Diodos TVS FlatSuppressX™ TP5.0SMD-FL5000W peak pulse power capability using a 10/1000µs waveform and 6.5W power dissipation.5/4/2026 -
Littelfuse Diodos TVS AK-FLAxial leaded, FlatSuppressX™ flat and low clamping bi-directional TVS diodes.5/4/2026 -
RECOM Power ICs, Transformers, & Discrete SolutionsFeatures components ideal for energy, industrial, and medical applications.4/24/2026 -
Littelfuse QVx35xHx High-Temperature Alternistor TRIACsOffers a 35A rated current and is available in TO-220AB, TO-220 isolated, and TO-263 packages.4/24/2026 -
Littelfuse SJx08x High-Temperature SCRsVoltage of up to 800V, surge current capability of up to 100A, & a temperature rating of +150°C.4/24/2026 -
Diotec Semiconductor BAS70-05W Schottky DiodeDesigned for high‑speed switching and voltage clamping in space‑constrained applications.4/16/2026 -
onsemi NVBYST0D8N08X Single N-Channel Power MOSFETOptimized for high‑voltage operation and withstands fast switching and high-current stresses.4/14/2026 -
ROHM Semiconductor High-Density SiC Power ModulesTRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.4/10/2026 -
Vishay Rectificadores de alto voltaje de recuperación estándar S07x-MGlass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 1000V.4/7/2026 -
Vishay Rectificadores de recuperación rápida RS07xGlass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 800V.4/7/2026 -
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFETLow switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.4/7/2026 -
onsemi NTMFD0D9N02P1E MOSFETDual N-channel MOSFET designed with low Rg for fast switching applications.4/6/2026 -
Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS DiodesAEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.4/2/2026 -
Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor DiodesHigh-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.4/2/2026 -
Vishay Módulo MOSFET de potencia VS-HOT200C080 de 200 A a 80 VThis device reduces board space requirements by up to 15% compared to standard discrete solutions.4/2/2026 -
Toshiba N-Channel/P-Channel Power MOSFETsIdeal for high-speed switching, power management switches, DC-DC converters, and motor drivers.3/31/2026 -
STMicroelectronics STL059N4S8AG Power MOSFETA 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.3/31/2026 -
Infineon Technologies Multi-Purpose Diodes for ESD ProtectionOffering the best protection in a small footprint, the diodes deliver superior ESD performance.3/27/2026 -
Infineon Technologies OptiMOS™ 6 60V Power MOSFETsDelivers superior performance to OptiMOS 5 via robust power MOSFET technology.3/27/2026 -
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETsApplication-optimized performance, enabling peak performance for data centers, servers, & AI.3/27/2026 -
RECOM Power RVS002 Micropower Isolated Power Bridge RectifiersCompact and ideal for micro-power isolated power supply applications with limited space.3/24/2026 -
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFETDelivers ultra-low conduction and switching losses in a robust TO-220 package.3/24/2026 -
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.3/20/2026