Nuevos MOSFETs de SiC
Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of RDS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.
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Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETsEngineered to meet the stringent demands of electric vehicle (EV) applications.12/19/2025
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onsemi NxT2023N065M3S EliteSiC MOSFETsFeature low effective output capacitance and ultra-low gate charge.12/4/2025 -
Central Semiconductor MOSFET de carburo de silicio (SiC) de canal N de 1700 VThese MOSFETS are designed for high-speed switching and fast reverse recovery applications.11/20/2025 -
ROHM Semiconductor 750V N-Channel SiC MOSFETsDevices boost switching frequency, decreasing the capacitors, reactors & other components required.10/17/2025 -
Infineon Technologies CoolSiC™ 1400V SiC G2 MOSFETsOffers improved thermal performance, increased power density, and enhanced reliability.10/9/2025 -
Microchip Technology 1200V SIC MOSFETsMOSFETs offer high efficiency in a lighter, more compact solution with fast switching speeds.9/25/2025 -
IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETsThese devices have a high blocking voltage with low on-state resistance [RDS(ON)].9/19/2025 -
IXYS IXSJxN120R1K 1200V SiC Power MOSFETsUp to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).8/27/2025 -
ROHM Semiconductor SCT2H12NWB 1700V N-Channel SiC Power MOSFETA 1700V drain-source voltage (VDSS) and 3.9A continuous drain current (ID) rated SiC MOSFET.8/21/2025 -
onsemi NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFETDelivers superior efficiency, fast switching, and robust thermal performance.8/8/2025 -
ROHM Semiconductor SCT40xKWA N-channel SiC power MOSFETsFeature 1200V VDS, low on-resistance, fast switching speed, and fast recovery time.7/14/2025 -
Littelfuse MOSFET de potencia SiC de 1200 V IXSJxN120R1High-performance devices designed for demanding power conversion applications.6/23/2025 -
Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETsAutomotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.6/3/2025 -
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFETFeatures a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.5/22/2025 -
APC-E Silicon Carbide (SiC) MOSFETsDelivers high power, high frequency, and unmatched performance for demanding applications.5/6/2025 -
Wolfspeed 1700V Silicon Carbide MOSFETsOffers higher switching, system efficiency, and power density for next-generation power conversion.4/17/2025 -
IXYS MOSFET SiC IXSA80N120L2-7Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.3/6/2025 -
IXYS MOSFET SiC IXSA40N120L2-7Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.3/6/2025 -
onsemi NVH4L050N170M1 Silicon Carbide (SiC) MOSFETsDeliver exceptional performance with a typical RDS(on) of 53mΩ at VGS = 20V.2/20/2025 -
onsemi NTBL032N065M3S Silicon Carbide (SiC) MOSFETsDesigned for fast switching applications, offering reliable performance.2/20/2025 -
Central Semiconductor CDMS24783-120 N-Channel SiC MOSFETOffers a 1200V drain-source voltage for high-speed switching and fast reverse recovery applications2/18/2025 -
IXYS MOSFET SiC IXSH40N120L2KHV1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.2/18/2025 -
IXYS MOSFET SiC IXSH80N120L2KHV1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.2/18/2025 -
SemiQ Dispositivos discretos MOSFET de SiC GEN3 de 1,200 VDeveloped to increase performance and cut switching losses in high-voltage applications.1/2/2025 -
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETsIdeal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.9/6/2024